SEMICONDUCTOR STRUCTURE HAVING NANOCRYSTALLINE CORE AND NANOCRYSTALLINE SHELL WITH INSULATOR COATING
Lighting apparatus including a light emitting diode and a plurality of semiconductor structures. Each semiconductor structure includes a quantum dot comprising a nanocrystalline core comprising a first semiconductor material and a nanocrystalline shell comprising a second, different, semiconductor material at least partially surrounding the nanocrystalline core, the quantum dot having a photoluminescence quantum yield (PLQY) of at least 90%. An insulator layer encapsulates the quantum dot.
1 . A lighting apparatus, comprising:
a light emitting diode; and
a plurality of semiconductor structures, each semiconductor structure comprising:
a quantum dot comprising a nanocrystalline core comprising a first semiconductor material and a nanocrystalline shell comprising a second, different, semiconductor material at least partially surrounding the nanocrystalline core, the quantum dot having a photoluminescence quantum yield (PLQY) of at least 90%; and
an insulator layer encapsulating the quantum dot.
2 . The lighting apparatus of claim 1 , wherein emission from each quantum dot is mostly, or entirely, from the nanocrystalline core.
3 . The lighting apparatus of claim 1 , wherein emission from the nanocrystalline core is at least approximately 75% of the total emission from the quantum dot.
4 . The lighting apparatus of claim 1 , wherein an absorption spectrum and an emission spectrum of each quantum dot are essentially non-overlapping.
5 . The lighting apparatus of claim 1 , wherein an absorbance ratio of each quantum dot for absorbance at 400 nanometers versus absorbance at an exciton peak for the quantum dot is approximately in the range of 5-35.
6 . The lighting apparatus of claim 1 , wherein each quantum dot is a down-converting quantum dot.