IP Library Granted Patent US 8,916,897
Granted Patent B2
US 8,916,897 · App. 13/904,396 · Granted Dec 23, 2014

Light-emitting element, light-emitting device, display device, electronic device, and lighting device

Inventors: Shunpei Yamazaki (Tokyo, JP); Satoshi Seo (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L33/50H01L51/504H01L51/0085H01L51/5004H01L51/52H01L51/5016
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Quick Facts
Patent No.
US 8,916,897
App. No.
13/904,396
Granted
Dec 23, 2014
Kind
B2
Abstract

An object is to provide a light-emitting element which uses a plurality of kinds of light-emitting dopants and has high emission efficiency. In one embodiment of the present invention, a light-emitting device, a light-emitting module, a light-emitting display device, an electronic device, and a lighting device each having reduced power consumption are provided by using the above light-emitting element. Focus is placed on Förster mechanism, which is one of mechanisms of intermolecular energy transfer. Efficient energy transfer by Förster mechanism is achieved by employing a combination of molecules which makes it possible to obtain an overlap between an emission spectrum band of the molecule which donates energy and the longest-wavelength-side peak of a characteristic curve obtained by multiplying an absorption spectrum of the molecule which receives energy by a wavelength raised to the fourth power.

Claims (102)

1. A light-emitting element comprising:

a first electrode;

a first light-emitting layer over the first electrode comprising:

a first phosphorescent compound; and

a first host material;

a second light-emitting layer over the first light-emitting layer comprising:

a second phosphorescent compound; and

a second host material;

a third light-emitting layer over the second light-emitting layer comprising:

a third phosphorescent compound; and

a third host material; and

a second electrode over the third light-emitting layer,

wherein light emitted from the second phosphorescent compound has a longer wavelength than light emitted from the first phosphorescent compound,

wherein a longest-wavelength-side peak of a function ε(λ)λ 4 of the second phosphorescent compound overlaps with a phosphorescence spectrum F(λ) of the first phosphorescent compound,

wherein light emitted from the third phosphorescent compound has a longer wavelength than the light emitted from the second phosphorescent compound,

wherein a longest-wavelength-side peak of a function ε(λ)λ 4 of the third phosphorescent compound overlaps with a phosphorescence spectrum F(λ) of the second phosphorescent compound,

wherein the second light-emitting layer has a thickness of less than 5 nm and greater than or equal to 1 nm,

wherein λ denotes a wavelength, and

wherein ε(λ) denotes a molar absorption coefficient at the wavelength λ.

2. The light-emitting element according to claim 1 , wherein the second light-emitting layer has a thickness of less than or equal to 2 nm and greater than or equal to 1 nm.

3. The light-emitting element according to claim 1 ,

wherein the first host material has an electron-transport property, and

wherein the second host material and the third host material each have a hole-transport property.

4. The light-emitting element according to claim 1 ,

wherein the first host material has a hole-transport property, and

wherein the second host material and the third host material each have an electron-transport property.

5. The light-emitting element according to claim 1 , wherein the longest-wavelength-side peak of the function ε(λ)λ 4 of the third phosphorescent compound is larger than the longest-wavelength-side peak of the function ε(λ)λ 4 of the second phosphorescent compound.

6. A lighting device comprising the light-emitting element according to claim 1 .

7. A light-emitting device comprising:

the light-emitting element according to claim 1 ; and

a driver circuit configured to control the light-emitting element.

8. A display device comprising:

the light-emitting element according to claim 1 in a display portion; and

a driver circuit configured to control the light-emitting element.

9. An electronic device comprising the light-emitting element according to claim 1 .

10. A light-emitting element comprising:

a first electrode;

a first light-emitting layer over the first electrode comprising:

a first phosphorescent compound; and

a first host material;

a plurality of second island-like light-emitting regions over the first light-emitting layer comprising:

a second phosphorescent compound; and

a second host material;

a third light-emitting layer over the plurality of second island-like light-emitting regions comprising:

a third phosphorescent compound; and

a third host material; and

a second electrode over the third light-emitting layer,

wherein light emitted from the second phosphorescent compound has a longer wavelength than light emitted from the first phosphorescent compound,

wherein a longest-wavelength-side peak of a function ε(λ)λ 4 of the second phosphorescent compound overlaps with a phosphorescence spectrum F(λ) of the first phosphorescent compound,

wherein light emitted from the third phosphorescent compound has a longer wavelength than the light emitted from the second phosphorescent compound,

wherein a longest-wavelength-side peak of a function ε(λ)λ 4 of the third phosphorescent compound overlaps with a phosphorescence spectrum F(λ) of the second phosphorescent compound,

wherein λ denotes a wavelength, and

wherein ε(λ) denotes a molar absorption coefficient at the wavelength λ.

11. The light-emitting element according to claim 10 ,

wherein the first host material has an electron-transport property, and

wherein the second host material and the third host material each have a hole-transport property.

12. The light-emitting element according to claim 10 ,

wherein the first host material has a hole-transport property, and

wherein the second host material and the third host material each have an electron-transport property.

13. The light-emitting element according to claim 10 , wherein the longest-wavelength-side peak of the function ε(λ)λ 4 of the third phosphorescent compound is larger than the longest-wavelength-side peak of the function ε(λ)λ 4 of the second phosphorescent compound.

14. A lighting device comprising the light-emitting element according to claim 10 .

15. A light-emitting device comprising:

the light-emitting element according to claim 10 ; and

a driver circuit configured to control the light-emitting element.

16. A display device comprising:

the light-emitting element according to claim 10 in a display portion; and

a driver circuit configured to control the light-emitting element.

17. An electronic device comprising the light-emitting element according to claim 10 .

18. A light-emitting element comprising:

a first electrode;

a first light-emitting layer over the first electrode comprising:

a first phosphorescent compound; and

a first host material;

a mixed layer over the first light-emitting layer comprising:

a plurality of second island-like light-emitting regions comprising:

a second phosphorescent compound; and

a second host material;

a plurality of third island-like light-emitting regions comprising:

a third phosphorescent compound; and

a third host material; and

a second electrode over the mixed layer,

wherein light emitted from the second phosphorescent compound has a longer wavelength than light emitted from the first phosphorescent compound,

wherein a longest-wavelength-side peak of a function ε(λ)λ 4 of the second phosphorescent compound overlaps with a phosphorescence spectrum F(λ) of the first phosphorescent compound,

wherein light emitted from the third phosphorescent compound has a longer wavelength than light emitted from the second phosphorescent compound,

wherein a longest-wavelength-side peak of a function ε(λ)λ 4 of the third phosphorescent compound overlaps with a phosphorescence spectrum F(λ) of the second phosphorescent compound,

wherein λ denotes a wavelength, and

wherein ε(λ) denotes a molar absorption coefficient at the wavelength λ.

19. The light-emitting element according to claim 18 ,

wherein the first host material has an electron-transport property, and

wherein the second host material and the third host material each have a hole-transport property.

20. The light-emitting element according to claim 18 ,

wherein the first host material has a hole-transport property, and

wherein the second host material and the third host material each have an electron-transport property.

21. The light-emitting element according to claim 18 , wherein the longest-wavelength-side peak of the function ε(λ)λ 4 of the third phosphorescent compound is larger than the longest-wavelength-side peak of the function ε(λ)λ 4 of the second phosphorescent compound.

22. A lighting device comprising the light-emitting element according to claim 18 .

23. A light-emitting device comprising:

the light-emitting element according to claim 18 ; and

a driver circuit configured to control the light-emitting element.

24. A display device comprising:

the light-emitting element according to claim 18 in a display portion; and

a driver circuit configured to control the light-emitting element.

25. An electronic device comprising the light-emitting element according to claim 18 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 14, 2013
From: YAMAZAKI, SHUNPEI; SEO, SATOSHI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 030617/0716 →
Priority Claims (1)
JP 2012-124943 · May 31, 2012 · national
Continuity (1)
Related Publication 20130320377A1 · Dec 5, 2013