DUV photoresist process
View Patent ↗DUV lithography process that eliminates post exposure baking of a photoresist. Thick photoresist may be processed to obtain enhanced sidewall profiles for microelectronic devices.
1. A method of forming a pattern in a DUV lithography process, the method comprising:
providing a photoresist on a substrate to form a coating;
heating the coating prior to exposure;
exposing a portion of the coating at a wavelength between 248 nm and 300 nm while irradiating the coating at a dosage from 160 mJ/cm 2 to 200 mJ/cm 2 , inclusive; and
developing the coating to form a pattern, without performing a post exposure bake prior to developing the coating.
2. The method of claim 1 , wherein the coating has a thickness of about 0.25 micrometers to about 5 micrometers after the coating is heated.
3. The method of claim 1 , wherein the coating has a thickness of about 1 micrometers to about 3 micrometers after the coating is heated.
4. The method of claim 1 , wherein the coating remaining after development comprises a structure having substantially straight sidewalls.
5. The method of claim 1 , wherein the coating is exposed at a wavelength of 248 nm.
6. The method of claim 1 , wherein the exposing a portion of the coating further comprises irradiating the coating with either a krypton fluoride laser or an argon fluoride laser.
7. A method of forming a pattern in a DUV lithography process, the method comprising:
providing a photoresist on a substrate to form a coating;
heating the coating prior to exposure;
exposing a portion of the coating to an illumination dose from 160 mJ/cm 2 to 200 mJ/cm 2 , inclusive; and
developing the coating to form a pattern, without performing a post exposure bake prior to developing the coating.
8. The method of claim 7 , wherein the coating has a thickness of about 0.25 micrometers to about 5 micrometers after the coating is heated.
9. The method of claim 7 , wherein the coating has a thickness of about 1 micrometers to about 3 micrometers after the coating is heated.
10. The method of claim 7 , wherein the coating remaining after development comprises a structure having substantially straight sidewalls.
11. The method of claim 7 , wherein the coating is exposed with either a krypton fluoride laser or an argon fluoride laser.
12. A method of forming a pattern in a DUV lithography process, the method comprising:
providing a chemically-amplified photoresist on a substrate to form a coating;
heating the coating prior to exposure;
exposing a portion of the coating at a wavelength between 248 nm and 300 nm while irradiating the coating with an illumination dose from 160 mJ/cm 2 to 200 mJ/cm 2 , inclusive; and
developing the coating to form a pattern, without performing a post exposure bake prior to developing the coating.
13. The method of claim 12 , wherein the coating has a thickness of about 0.25 micrometers to about 5 micrometers after the coating is heated.
14. The method of claim 12 , wherein the coating has a thickness of about 1 micrometers to about 3 micrometers after the coating is heated.
15. The method of claim 12 , wherein the coating remaining after development comprises a structure having substantially straight sidewalls.
16. The method of claim 12 , wherein the coating is exposed at a wavelength of 248 nm.
17. The method of claim 12 , wherein the coating is exposed with a krypton fluoride laser or an argon fluoride laser.
18. The method of claim 12 , wherein the chemically-amplified photoresist is catalyzed with an acid.