Semiconductor Devices and Methods of Manufacturing the Same
Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a charge storage pattern formed on a substrate; a dielectric pattern formed on the charge storage pattern; a first conductive pattern including silicon doped with a first impurity of a first concentration, the first conductive pattern being disposed on the dielectric pattern; and a second conductive pattern including metal silicide doped with a second impurity of a second concentration, the second conductive pattern being disposed on the first conductive pattern. The first concentration may be higher than the second concentration.
1 . A method of manufacturing a semiconductor device, comprising:
forming a first conductive pattern including silicon doped with a first impurity of a first concentration on a lower structure; and
forming a second conductive pattern on the first conductive pattern, the second conductive pattern including metal silicide doped with a second impurity of a second concentration that is lower than the first concentration.
2 . The method of claim 1 , wherein forming the second conductive pattern comprises:
forming a second conductive layer including the silicon doped with the second impurity of the second concentration on the first conductive pattern; and
patterning the second conductive layer to form the second conductive pattern.
3 . The method of claim 1 , wherein the first conductive layer comprises silicon doped with the first impurity including carbon (C), oxygen (O), nitrogen (N), germanium (Ge), arsenic (As), boron (B), fluorine (F) or combinations thereof, and
wherein the second conductive layer comprises silicon doped with the second impurity including carbon (C), oxygen (O), nitrogen (N), germanium (Ge), arsenic (As), boron (B), fluorine (F) or combinations thereof.
4 . The method of claim 1 , further comprising forming a third conductive pattern including silicon doped with a third impurity of a third concentration that is lower than the first concentration.
5 . The method of claim 4 , wherein forming the third conductive pattern comprises:
forming a third conductive layer comprising silicon doped with the second impurity including carbon (C), oxygen (O), nitrogen (N), germanium (Ge), arsenic (As), boron (B), fluorine (F) or combinations thereof; and
patterning the third conductive layer to form the third conductive pattern.
6 . The method of claim 4 , wherein the first concentration is about ten times through about thirty times as high as the second and third concentrations.
7 . The method of claim 4 , further comprising forming a fourth conductive pattern including silicon doped with a fourth impurity of a fourth concentration that is substantially lower than the first concentration, the fourth conductive pattern formed between the first conductive pattern and the second conductive pattern.
8 . The method of claim 1 , wherein the lower structure comprises a charge storage pattern formed on a substrate and a dielectric pattern formed on the charge storage pattern.