Exposure method, exposure apparatus, and photomask

1. An exposure method comprising:

exposing, with a photomask including a shot pattern including chip patterns arranged therein, a plurality of shot patterns onto a wafer as a first pattern, each of the plurality of shot patterns corresponding to the shot pattern;

aligning the photomask on the wafer so that a first region of the shot pattern overlaps the first pattern, a second region other than the first region of the shot pattern is outside the first pattern, and the chip patterns are continuously arranged in the first pattern and the second region after the step of exposing the plurality of shot patterns;

adjusting focus on the wafer, with the photomask having been aligned on the wafer after the step of aligning the photomask; and

shielding the first region from light and exposing a pattern of the second region onto the wafer as a second pattern after the step of adjusting the focus,

wherein:

the photomask includes a first scribe pattern with a monitor pattern formed therein and a second scribe pattern without the monitor pattern formed therein;

the first scribe pattern and the second scribe pattern are located between the chip patterns of the photomask;

a first single second scribe pattern among the second scribe pattern extends from one periphery of the photomask to the other periphery of the photomask in the horizontal direction;

a second single second scribe pattern among the second scribe pattern extends from one periphery of the photomask to the other periphery of the photomask in the vertical direction; and

an entire boundary between the first region and the second region is located in the first single second scribe pattern and the second single second scribe pattern.

2. The exposure method according to claim 1 , wherein

the aligning the photomask on the wafer, the adjusting the focus on the wafer, the shielding the first region from light and the exposing the pattern of the second region onto the wafer as the second pattern are sequentially performed to shot patterns including the first regions with identical shapes while an arrangement of a blind shielding the first region from the light is maintained.

3. The exposure method according to claim 1 , wherein

the chip patterns are identical chip patterns, and

the chip patterns are arranged in at least one of a first direction and a second direction intersecting with the first direction in the shot pattern.

4. The exposure method according to claim 1 , wherein

the first pattern is exposed onto the wafer so that a plurality of the shot patterns arranged in a first direction and a second direction intersecting with the first direction do not overlap each other and the chip patterns are arranged at regular intervals.

5. The exposure method according to claim 1 , wherein

the second region includes a chip pattern within an effective region of the wafer.

6. The exposure method according to claim 5 , wherein

the first region includes a chip pattern within the effective region.

7. An exposure apparatus comprising:

an exposure unit that exposes a pattern onto a wafer with a photomask including a shot pattern including chip patterns arranged therein;

an adjustment unit that adjusts focus on the wafer; and

a controller that controls the exposure unit to expose a plurality of shot patterns onto the wafer as a first pattern, each of the plurality of shot patterns corresponding to the shot pattern, the adjustment unit to adjust the focus after the exposure unit exposes the plurality of shot patterns, with the photomask having been aligned on the wafer, so that a first region of the shot pattern overlaps the first pattern, a second region other than the first region of the shot pattern is outside the first pattern, and the chip patterns are continuously arranged in the first pattern and the second region, and the exposure unit to shield the first region from light and expose a pattern of the second region onto the wafer as a second pattern after the adjustment unit adjusts the focus,

wherein:

the photomask includes a first scribe pattern with a monitor pattern formed therein and a second scribe pattern without the monitor pattern formed therein;

the first scribe pattern and the second scribe pattern are located between the chip patterns of the photomask;

a first single second scribe pattern among the second scribe pattern extends from one periphery of the photomask to the other periphery of the photomask in the horizontal direction;

a second single second scribe pattern among the second scribe pattern extends from one periphery of the photomask to the other periphery of the photomask in the vertical direction; and

an entire boundary between the first region and the second region is located in the first single second scribe pattern and the second single second scribe pattern.

8. The exposure apparatus according to claim 7 , wherein

the controller sequentially controls the adjustment unit to align the photomask on the wafer and to adjust of the focus on the wafer, and the exposure unit to shield the first region from light and to expose the pattern of the second region onto the wafer as the second pattern to shot patterns including the first regions with identical shapes while an arrangement of a blind shielding the first region from the light is maintained.