Tuning and synthesis of semiconductor nanostructures by mechanical compression
A mechanical compression method can be used to tune semiconductor nanoparticle lattice structure and synthesize new semiconductor nanostructures including nanorods, nanowires, nanosheets, and other three-dimensional interconnected structures. II-VI or IV-VI compound semiconductor nanoparticle assemblies can be used as starting materials, including CdSe, CdTe, ZnSe, ZnS, PbSe, and PbS.
1. A method for the synthesis of semiconductor nanostructures by mechanical compression, comprising:
providing a film comprising a periodically ordered assembly of compound semiconductor nanoparticles in a pressure-transmitting medium; and
compressing the film to a pressure above a threshold pressure above which the compound semiconductor nanoparticles of the periodically ordered assembly of compound semiconductor nanoparticles contact, coalesce, and sinter to synthesize a new nanostructure comprising a nanorod, nanowire, or nanosheet.
2. The method of claim 1 , wherein the compound semiconductor comprises a II-VI or IV-VI compound semiconductor.
3. The method of claim 2 , wherein the IV-VI compound semiconductor comprises PbSe or PbS.
4. The method of claim 2 , wherein the II-VI compound semiconductor comprises CdSe, CdS, ZnSe, or ZnS.
5. The method of claim 1 , wherein the periodically ordered assembly comprises a face-centered-cubic mesophase.
6. The method of claim 1 , wherein the pressure is applied with a diamond anvil cell.
7. The method of claim 1 , wherein the pressure is applied with a piston-cylinder device, multi-anvil cell, or embossing machine.
8. The method of claim 1 , wherein the threshold pressure is about 8 GPa.
9. The method of claim 1 , further comprising releasing the pressure to ambient after synthesis of the new nanostructure.
10. The method of claim 9 , further comprising dispersing the new nanostructure in an organic solvent after releasing the pressure to ambient.