Programmable III-nitride semiconductor device
View Patent ↗A III-nitride semiconductor device which includes a charged gate insulation body.
1. A III-nitride semiconductor device comprising:
a first III-nitride semiconductor body comprising GaN;
a second III-nitride semiconductor body comprising AlGaN and disposed over said first III-nitride semiconductor body to form a two dimensional electron gas;
first and second power electrodes coupled to said second III-nitride semiconductor body;
a gate electrode electrically insulated by a gate insulation body from said second III-nitride semiconductor body, wherein said gate insulation body comprises only one insulation body, and wherein a charge is trapped within said only one insulation body, said charge adjusting a threshold voltage of said III-nitride semiconductor device.
2. The III-nitride semiconductor device of claim 1 , wherein said threshold voltage is adjusted so as to cause said III-nitride semiconductor device to be normally OFF.
3. The III-nitride semiconductor device of claim 1 , wherein said only one insulation body comprises silicon dioxide.
4. The III-nitride semiconductor device of claim 1 , wherein said only one insulation body comprises silicon nitride.
5. The III-nitride semiconductor device of claim 1 , wherein said only one insulation body comprises a recess.
6. The III-nitride semiconductor device of claim 1 , wherein said charge is formed by a dopant selected from the group consisting of Fluorine, Chlorine, Bromine, and Iodine.
7. The III-nitride semiconductor device of claim 1 , wherein said charge is formed by a combination of dopants, wherein said dopants are selected from the group consisting of Fluorine, Chlorine, Bromine, and Iodine.
8. A III-nitride semiconductor device comprising:
a first III-nitride semiconductor body comprising GaN;
a second III-nitride semiconductor body comprising AlGaN and disposed over said first III-nitride semiconductor body to form a two dimensional electron gas;
first and second power electrodes coupled to said second III-nitride semiconductor body;
a gate electrode electrically insulated by a gate insulation body from said second III-nitride semiconductor body, wherein said gate insulation body comprises only one insulation body, and wherein a charge is trapped between said only one insulation body and said second III-nitride semiconductor body, said charge adjusting a threshold voltage of said III-nitride semiconductor device.
9. The III-nitride semiconductor device of claim 8 , wherein said threshold voltage is adjusted so as to cause said III-nitride semiconductor device to be normally OFF.
10. The III-nitride semiconductor device of claim 8 , wherein said only one insulation body comprises silicon dioxide.
11. The III-nitride semiconductor device of claim 8 , wherein said only one insulation body comprises silicon nitride.
12. The III-nitride semiconductor device of claim 8 , wherein said only one insulation body comprises a recess.
13. The III-nitride semiconductor device of claim 8 , wherein said charge is formed by a dopant selected from the group consisting of Fluorine, Chlorine, Bromine, and Iodine.
14. The III-nitride semiconductor device of claim 8 , wherein said charge is formed by a combination of dopants, wherein said dopants are selected from the group consisting of Fluorine, Chlorine, Bromine, and Iodine.
15. A III-nitride semiconductor device comprising:
a first III-nitride semiconductor body comprising GaN;
a second III-nitride semiconductor body comprising AlGaN and disposed over said first III-nitride semiconductor body to form a two dimensional electron gas;
first and second power electrodes coupled to said second III-nitride semiconductor body;
a gate electrode electrically insulated by a gate insulation body from said second III-nitride semiconductor body, wherein said gate insulation body comprises only one insulation body, and wherein a charge is trapped between said only one insulation body and said gate electrode, said charge adjusting a threshold voltage of said III-nitride semiconductor device.
16. The III-nitride semiconductor device of claim 15 , wherein said threshold voltage is adjusted so as to cause said III-nitride semiconductor device to be normally OFF.
17. The III-nitride semiconductor device of claim 15 , wherein said only one insulation body comprises silicon dioxide.
18. The III-nitride semiconductor device of claim 15 , wherein said only one insulation body comprises silicon nitride.
19. The III-nitride semiconductor device of claim 15 , wherein said charge is formed by a dopant selected from the group consisting of Fluorine, Chlorine, Bromine, and Iodine.
20. The III-nitride semiconductor device of claim 15 , wherein said charge is formed by a combination of dopants, wherein said dopants are selected from the group consisting of Fluorine, Chlorine, Bromine, and Iodine.