III-nitride heterojunction device

1. A III-nitride device comprising:

a III-nitride heterojunction that includes a first III-nitride semiconductor body having one band gap, and a second III-nitride semiconductor body having another band gap disposed on said first III-nitride semiconductor body to generate a two dimensional electron gas;

a first power electrode disposed over said III-nitride heterojunction and electrically coupled to said two dimensional electron gas;

a second power electrode disposed over said III-nitride heterojunction and electrically coupled to said two dimensional electron gas;

a gate arrangement disposed between said first power electrode and said second power electrode;

spaced interrupted regions in said two-dimensional electron gas below said gate arrangement, wherein said gate arrangement has a width, and at least one of said interrupted regions is wider than said width of said gate arrangement;

wherein said two-dimensional electron gas is segmented by said spaced interrupted regions along a length of said gate arrangement.

2. The III-nitride device of claim 1 , wherein said first and second power electrodes are ohmically coupled to said second III-nitride semiconductor body.

3. The III-nitride device of claim 1 , wherein said gate arrangement includes an electrode that is Schottky coupled to said second III-nitride semiconductor body.

4. The III-nitride device of claim 1 , wherein said gate arrangement includes a gate electrode and a gate insulation body interposed between said gate electrode and said III-nitride heterojunction.

5. The III-nitride device of claim 1 , wherein said first power electrode, said second power electrode, and said gate arrangement are parallel elongated bodies.

6. The III-nitride device of claim 1 , wherein said interrupted regions are disposed below respective recesses in said second III-nitride semiconductor body.

7. The III-nitride device of claim 1 , wherein said interrupted regions comprise recesses formed in said III-nitride heterojunction.

8. The III-nitride device of claim 1 , further comprising implant regions in said III-nitride heterojunction each said implant region causing a formation of at least one of said interrupted regions.

9. The III-nitride device of claim 8 , wherein said implant regions comprise a transition metal.

10. The III-nitride device of claim 9 , wherein said transition metal comprises Fe.

11. The III-nitride device of claim 9 , wherein said transition metal comprises Cr.

12. The III-nitride device of claim 9 , wherein said transition metal comprises V.

13. The III-nitride device of claim 1 , said first III-nitride semiconductor body comprises GaN and said second III-nitride semiconductor body comprises AlGaN.

14. The III-nitride device of claim 1 , further comprising a substrate, wherein said III-nitride heterojunction is disposed over said substrate.

15. The III-nitride device of claim 14 , wherein said substrate comprises one of Si, SiC, and sapphire.

16. The III-nitride device of claim 14 ; further comprising a transition layer between said substrate and said III-nitride heterojunction.

17. The III-nitride device of claim 16 , wherein said transition layer comprises AlN.