Nucleation and growth of tin particles into three dimensional composite active anode for lithium high capacity energy storage device

1. An anodic structure used to form an energy storage device, comprising:

a flexible conductive substrate;

a plurality of conductive microstructures formed on the flexible conductive substrate, the plurality of conductive microstructures comprising:

a plurality of columnar projections; and

dendritic structures formed over the plurality of columnar projections; and

a plurality of tin particles deposited on the plurality of conductive microstructures.

2. The anodic structure of claim 1 , further comprising:

a tin nucleation layer comprising tin particles formed on the flexible conductive substrate between the flexible conductive substrate and the plurality of conductive microstructures.

3. The anodic structure of claim 1 , wherein the tin particles are nano-particles having a particle size between about 10 nm and about 50 nm.

4. The anodic structure of claim 1 , wherein the tin particles are micro-particles having a particle size of about 1 micron.

5. The anodic structure of claim 1 , wherein the plurality of columnar projections is a copper microstructure and the dendritic structure is a copper-tin dendritic structure.

6. The anodic structure of claim 1 , wherein the conductive microstructures comprise a macro-porous structure having macro-pores of between about 5 and about 100 microns (μm) in diameter.

7. The anodic structure of claim 6 , wherein the conductive microstructures further comprise a meso-porous structure having a plurality of meso-pores that are between about 100 nm to about 1,000 nm in diameter.

8. The anodic structure of claim 7 , wherein the conductive microstructures further comprise a nano-porous structure having a plurality of nano-pores having a diameter less than about 100 nm.

9. The anodic structure of claim 1 , wherein the conductive microstructures comprises a material selected from a group consisting of: copper, zinc, nickel, cobalt, palladium, platinum, tin, ruthenium, alloys thereof, and combinations thereof.

10. A substrate processing system for processing a flexible conductive substrate, comprising:

a first plating chamber configured to deposit tin particles on a flexible conductive substrate;

a second plating chamber configured to form a columnar layer of a first metal over the tin particles and the flexible conductive substrate;

a third plating chamber configured to form a dendritic structure over the columnar layer;

a fourth plating chamber configured to deposit tin particles over the dendritic structure; and

a substrate transfer mechanism configured to transfer the flexible conductive substrate among the chambers.

11. The substrate processing system of claim 10 , wherein each of the plating chambers comprises:

a chamber body defining a processing volume, wherein the processing volume is configured to retain a plating bath therein, and the chamber body has an upper opening;

a draining system configured to drain the plating bath from the processing volume;

an anode assembly disposed in the processing volume, wherein the anode assembly comprises an anode immersed in the plating bath; and

a cathode assembly disposed in the processing volume, wherein the cathode assembly comprises:

a substrate handler configured to position the flexible conductive substrate substantially parallel to the anode in the processing volume; and

a contacting mechanism configured to couple an electric bias to the flexible conductive substrate; and

a feed roll disposed outside the processing volume and configured to retain a portion of the flexible conductive substrate;

a bottom roll disposed near a bottom portion of the processing volume and configured to retain a portion of the flexible conductive substrate; and

a take up roll disposed outside the processing volume and configured to retain a portion of the flexible conductive substrate, wherein the substrate transfer mechanism is configured to activate the feed rolls and the take up rolls to transfer the flexible conductive substrate in and out of each chamber, and hold the flexible conductive substrate in the processing volume of each chamber.

12. The substrate processing system of claim 10 , wherein the flexible conductive substrate is positioned substantially vertical in each chamber during processing.

13. The substrate processing system of claim 11 , wherein each plating chamber further comprises:

a thrust plate movably disposed in the processing volume, wherein the thrust plate is configured to push against a portion of the flexible conductive substrate so that the flexible conductive substrate is proximate to and substantially parallel to the anode.

14. The substrate processing system of claim 13 , wherein each plating chamber further comprises:

a masking plate positioned against a plating surface of the flexible conductive substrate, wherein the masking plate is configured to expose portions of the flexible conductive substrate to be plated.

15. The substrate processing system of claim 11 , wherein the contacting mechanism of each plating chamber comprises a masking plate positioned against a plating surface of the flexible conductive substrate, wherein the masking plate is configured to expose portions of the flexible conductive substrate to be plated.