A current sensor includes a substrate, a conductive body being provided above the substrate and extending in one direction, and magnetoresistance effect elements being provided between the substrate and the conductive body and outputting output signals owing to an induction magnetic field from a current to be measured being conducted through the conductive body, wherein each of the magnetoresistance effect elements has a laminated structure including a ferromagnetic fixed layer whose magnetization direction is fixed, a non-magnetic intermediate layer, and a free magnetic layer whose magnetization direction fluctuates with respect to an external magnetic field, the ferromagnetic fixed layer is a self-pinned type formed by antiferromagnetically coupling a first ferromagnetic film and a second ferromagnetic film through an antiparallel coupling film, the Curie temperatures of the first ferromagnetic film and the second ferromagnetic film are approximately equal, and a difference between the magnetization amounts thereof is substantially zero.
1. A current sensor comprising:
a substrate;
a conductive body extending in a first direction and configured to flow a current to be measured therethrough, the conductive body being provided above the substrate; and
at least two magnetoresistance effect elements arranged in parallel between the substrate and the conductive body, the magnetoresistance effect elements outputting an output signal based on an induction magnetic field from the current to be measured, each of the magnetoresistance effect elements having a laminated structure including:
a ferromagnetic fixed layer whose magnetization direction is fixed,
a non-magnetic intermediate layer, and
a free magnetic layer whose magnetization direction varies in accordance with an external magnetic field,
wherein the ferromagnetic fixed layer is a self-pinned type in which a first ferromagnetic film and a second ferromagnetic film are antiferromagnetically coupled to each other with an antiparallel coupling film interposed therebetween, Curie temperatures of the first ferromagnetic film and the second ferromagnetic film are substantially the same, and a magnetization amount of the first ferromagnetic film and a magnetization amount of the second ferromagnetic film are substantially the same,
and wherein a direction in which the magnetoresistance effect elements are arranged in parallel is substantially the same as the first direction in which the conductive body extends.
2. The current sensor according to claim 1 , wherein a cross-section of the conductive body in a direction perpendicular to the first direction has a rectangular shape.
3. The current sensor according to claim 1 , wherein
the magnetoresistance effect elements are overlaid by the conductive body extending in the first direction.
4. The current sensor according to claim 1 , further comprising:
a magnetic field detection bridge circuit including the at least two magnetoresistance effect elements, and two outputs producing therebetween a voltage difference corresponding to the induction magnetic field,
wherein the current to be measured is measured based on the voltage difference output from the magnetic field detection bridge circuit in accordance with the induction magnetic field.
5. The current sensor according to claim 1 , further comprising:
a magnetic field detection bridge circuit including:
a first pair of the magnetoresistance effect elements in which the magnetization directions of the ferromagnetic fixed layers are fixed in a second direction;
a second pair of the magnetoresistance effect elements in which the magnetization directions of the ferromagnetic fixed layers are fixed in a third direction opposite to the second direction; and two outputs producing therebetween a voltage difference corresponding to the induction magnetic field,
wherein the current to be measured is measured based on the voltage difference output from the magnetic field detection bridge circuit in accordance with the induction magnetic field.