Protection Circuit
View Patent ↗A protection circuit for an electronic circuit. The protection circuit includes a first transistor, a second transistor, a base current path, and a current discharge path. The first transistor is connected to a first terminal of the electronic circuit. The second transistor is connected to a second terminal of the electronic circuit. The first transistor is connected to the second transistor forming the base current path. The current discharge path conducts a discharge current from the first terminal to the second terminal through the second transistor when the second transistor is turned on with a base current in the base current path.
1. A protection circuit for an electronic circuit, the protection circuit comprising:
a first transistor, the emitter terminal of the first transistor being connected to a first terminal of the electronic circuit;
a second transistor, the emitter terminal of the second transistor being connected to a second terminal of the electronic circuit;
a base current path for conducting a base current from the base terminal of the first transistor to the base terminal of the second transistor when a voltage at the emitter terminal of the first transistor exceeds the reverse breakdown voltage of the base emitter junction of the first transistor plus the forward turn-on voltage of the base emitter junction of the second transistor;
a current discharge path for conducting a discharge current from the first terminal to the second terminal through the second transistor when the second transistor is turned on with the base current; and
one or more diodes in the base current path or connected to the base current path.
2. The protection circuit according to claim 1 , wherein the one or more diodes in the base current path are connected in series.
3. The protection circuit according to claim 1 , wherein the one or more diodes in the base current path are connected in parallel.
4. The protection circuit according to claim 1 , wherein the discharge current flows from the first terminal to the second terminal when the voltage at the emitter terminal of the first transistor exceeds the reverse breakdown voltage of the base emitter junction of the first transistor plus the forward turn-on voltage of the base emitter junction of the second transistor plus a sum of turn-on voltages of the one or more diodes.
5. The protection circuit according to claim 1 , wherein the collector terminal of the first transistor is connected to the collector terminal of the second transistor.
6. The protection circuit according to claim 1 , wherein:
the collector terminal of the first transistor is connected to the cathode terminal of a second diode;
the collector terminal of the second transistor is connected to the cathode terminal of a first diode; and
the anode terminal of the first diode is connected to the first terminal.
7. The protection circuit according to claim 6 , wherein the discharge current flows through the first diode and the second transistor when the second transistor is turned on.
8. The protection circuit according to claim 6 , wherein a reverse discharge current flows through the second diode and the first transistor when the first transistor is turned on.
9. The protection circuit according to claim 6 , wherein the cathode terminal of the second diode, the cathode terminal of the first diode, the collector terminal of the second transistor, and the collector terminal of the first transistor are connected to form a common collector area.
10. The protection circuit according to claim 1 , wherein the base terminal of the first transistor and the base terminal of the second transistor are connected to form a common base area.
11. A protection circuit for an electronic circuit, the protection circuit comprising:
a first transistor, the emitter terminal of the first transistor being connected to a first terminal of the electronic circuit;
a second transistor, the emitter terminal of the second transistor being connected to a second terminal of the electronic circuit;
a base current path for conducting a base current from the base terminal of the first transistor to the base terminal of the second transistor when a voltage at the emitter terminal of the first transistor exceeds the reverse breakdown voltage of the base emitter junction of the first transistor plus the forward turn-on voltage of the base emitter junction of the second transistor;
a current discharge path for conducting a discharge current from the first terminal to the second terminal through the second transistor when the second transistor is turned on with the base current;
a first diode in the current discharge path for conducting the discharge current when the second transistor is on; and
one or more diodes in the base current path or connected to the base current path.
12. The protection circuit according to claim 11 , wherein the discharge current flows from the first terminal to the second terminal through the first diode and the second transistor when the voltage at the emitter terminal of the first transistor exceeds the reverse breakdown voltage of the base emitter junction of the first transistor plus a forward turn-on voltage of the base emitter junction of the second transistor plus a sum of turn-on voltages of the one or more diodes.
13. The protection circuit according to claim 11 , wherein the anode terminal of the first diode is connected with the first terminal and the cathode terminal of the first diode is connected with the collector terminal of the second transistor.
14. The protection circuit according to claim 11 further comprises a second diode, wherein the cathode terminal of the second diode is connected with the collector terminal of the first transistor and the anode terminal of the second diode is connected with the second terminal.
15. The protection circuit according to claim 11 , wherein the collector terminal of the first transistor and the collector terminal of the second transistor are connected.
16. The protection circuit according to claim 11 , wherein the first transistor and the second transistor are at least one of an n-p-n type transistor and a p-n-p type transistor.
17. The protection circuit according to claim 14 , wherein the first diode is forward-biased and a second diode is reverse-biased when the first transistor and second transistor are n-p-n type transistors, and wherein first diode is reverse-biased and the second diode is forward-biased when the first transistor and second transistor are p-n-p type transistors.
18. An integrated circuit for protecting an electronic circuit from electrostatic discharge (ESD), the integrated circuit comprising:
a first transistor, the emitter terminal of the first transistor being connected to a first terminal of the electronic circuit;
a second transistor, the emitter terminal of the second transistor being connected to a second terminal of the electronic circuit, and the base terminal of the second transistor is integrated with the base terminal of the first transistor to form a common base area;
a first diode, the anode terminal of the first diode being connected to the emitter terminal of the first transistor; and
a second diode, the anode terminal of the second diode being connected to the emitter terminal of the second transistor and
the cathode terminal of the second diode, the cathode terminal of the first diode, the collector terminal of the second transistor, and the collector terminal of the first transistor are connected to form a common collector area.