Semiconductor device
A method for manufacturing a semiconductor device, includes: a step of etching a Si ( 111 ) substrate along a ( 111 ) plane of the Si ( 111 ) substrate to separate a Si ( 111 ) thin-film device having a separated surface along the ( 111 ) plane.
1. A semiconductor device comprising:
a substrate having a surface;
a light emitting element having an electrode forming surface and a bonding surface provided on an opposite side to the electrode forming surface, the bonding surface directly bonded to the surface of the substrate; and
a Si ( 111 ) element having a first surface and a second surface opposed to the first surface, the Si ( 111 ) element including an integrated circuit configured to drive the light emitting element, wherein
the second surface of the Si ( 111 ) element is directly bonded to the surface of the substrate;
the light emitting element includes a first electrode, a second electrode and a third electrode,
the second electrode is connected to the integrated circuit by a metal thin-film wiring,
wherein the integrated circuit of the Si ( 111 ) element comprises a controller configured to control an electrical current flowing between the first electrode and the third electrode.
2. A semiconductor device according to claim 1 , wherein
the second surface of the Si ( 111 ) element is bonded to the surface of the substrate by intermolecular force.
3. A semiconductor device according to claim 1 , wherein
the surface of the substrate has a bonding layer, and
the second surface of the Si ( 111 ) element is directly bonded to the bonding layer.
4. A semiconductor device according to claim 3 , wherein
the second surface of the Si ( 111 ) element is bonded to the bonding layer by intermolecular force.
5. A semiconductor device according to claim 1 , wherein
the bonding surface of the light emitting element is bonded to the surface of the substrate by intermolecular force.
6. A semiconductor device according to claim 1 , wherein
the surface of the substrate includes a bonding layer, and
the bonding surface of the light emitting element is directly bonded to the bonding layer.
7. A semiconductor device according to claim 6 , wherein
the bonding surface of the light emitting element is bonded to the bonding layer by intermolecular force.
8. A semiconductor device according to claim 1 , wherein
the light emitting element is made of a compound semiconductor.
9. A semiconductor device according to claim 1 , wherein the light emitting element includes at least a first PN junction and a second PN junction.
10. A semiconductor device according to claim 1 , wherein the substrate is a metal substrate.
11. A semiconductor device according to claim 2 , wherein a flatness of the second surface of the Si ( 111 ) element is equal to or less than 2 nm.
12. A semiconductor device according to claim 3 , wherein the bonding layer is a metal layer, an AIN layer, or a diamond-like carbon layer.
13. A semiconductor device according to claim 6 , wherein the bonding layer is a metal layer, an AIN layer, or a diamond-like carbon layer.
14. A semiconductor device according to claim 1 , wherein the Si ( 111 ) element includes at least one of an antenna device, piezoelectric device on the first surface of the Si ( 111 ) element.
15. A semiconductor device according to claim 1 , wherein the Si ( 111 ) element includes at least one of a solar cell device, a high-frequency device, an optical device, and a reflecting mirror.