Storage device and storage unit
View Patent ↗A storage device includes: a first electrode; a storage layer including an ion source layer; and a second electrode. The first electrode, the storage layer, and the second electrode are provided in this order. The ion source layer contains a movable element, and has a volume resistivity of about 150 mΩ·cm to about 12000 mΩ·cm both inclusive.
1. A storage device, comprising:
a first electrode;
a second electrode; and
a storage layer between the first and second electrodes, the storage layer including an ion source layer,
wherein,
the ion source layer contains neither aluminum (Al) nor copper (Cu),
the ion source layer contains a movable element,
the ion source layer contains oxygen, and
the ion source layer has a volume resistivity of at least 150 mΩ·cm but less than or equal to 12000 mΩ·cm such that the storage layer has a low resistance state corresponding to first stored information, a high resistance state corresponding to second stored information, and at least one intermediate resistance state, between the low resistance state and the high resistance state, corresponding to third stored information.
2. The storage device according to claim 1 , wherein the ion source layer has the volume resistivity of about 450 mΩ·cm to about 3000 mΩ·cm both inclusive.
3. The storage device according to claim 1 , wherein the movable element is positively or negatively ionized by application of an electric field.
4. The storage device according to claim 3 , wherein the ion source layer contains, as the movable element positively ionized, one or more elements selected from the group consisting of Group 4 elements, Group 5 elements, and Group 6 elements of the Periodic Table.
5. The storage device according to claim 4 , wherein the movable element is selected from the group consisting of titanium (Ti), zirconium (Zr), and hafnium (Hf).
6. The storage device according to claim 3 , wherein the ion source layer contains, as the movable element negatively ionized, one or more elements selected from the group consisting of Group 16 elements of the Periodic Table.
7. The storage device according to claim 6 , wherein the movable element negatively ionized is selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).
8. The storage device according to claim 1 , wherein the storage layer includes a resistance change layer provided closer to the first electrode than the second electrode.
9. The storage device according to claim 8 , wherein the resistance change layer is configured from a metal oxide film, a metal nitride film, or a metal oxynitride film.
10. The storage device according to claim 8 , wherein the resistance change layer has a resistance value that varies in response to an application of a voltage to the first electrode and the second electrode.
11. A storage unit with a plurality of storage devices and a pulse applier that selectively applies a voltage pulse or a current pulse to the storage devices, the storage devices each comprising:
a first electrode;
a second electrode; and
a storage layer between the first and second electrodes, the storage layer including an ion source layer
wherein,
the ion source layer contains neither aluminum (Al) nor copper (Cu),
the ion source layer contains a movable element,
the ion source layer contains oxygen, and
the ion source layer has a volume resistivity of at least 150 mΩ·cm but less than or equal to 12000 mΩ·cm such that the storage layer has a low resistance state corresponding to first stored information, a high resistance state corresponding to second stored information, and at least one intermediate resistance state, between the low resistance state and the high resistance state, corresponding to third stored information.
12. A storage device, comprising:
a first electrode;
a second electrode; and
a storage layer between the first and second electrodes, the storage layer including a resistance change layer and an ion source layer,
wherein,
the resistance change layer has a resistance value that varies in response to an application of a voltage to the first electrode and the second electrode,
the resistance change layer is selected from the group consisting of a metal oxide film, a metal nitride film, and a metal oxynitride film,
the ion source layer includes a metal chalcogenide oxide layer comprised of a transition metal element, a chalcogen element and oxygen,
the metal chalcogenide oxide layer has an amorphous structure,
the transition metal element is selected from the group consisting of titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), and tungsten (W),
the chalcogen element is selected from the group consisting of tellurium (Te), sulfur (S), and selenium (Se),
the ion source layer contains neither aluminum (Al) nor copper (Cu),
the ion source layer does not contain any movable element that is as movable or more movable in the metal chalcogenide oxide layer upon application of the voltage than either aluminum or copper, and
the ion source layer has a volume resistivity of at least 150 mΩ·cm but less than or equal to 12000 mΩ·cm such that the storage layer has a low resistance state corresponding to first stored information, a high resistance state corresponding to second stored information, and at least one intermediate resistance state, between the low resistance state and the high resistance state, corresponding to third stored information.
13. The storage device of claim 12 , wherein:
the ion source layer has a film thickness of 10 nm to 15 nm, both inclusive, and
the ion source layer has a volume resistivity of 450 mΩ·cm to 3000 mΩ·cm, both inclusive.