Light-emitting device and the manufacturing method thereof
View Patent ↗A light-emitting device includes: a substrate including an upper surface, wherein the upper surface includes an ion implantation region; a semiconductor layer formed on the upper surface; a light-emitting stack formed on the semiconductor layer; and a plurality of scattering cavities formed between the semiconductor layer and the upper surface in accordance with the ion implantation region.
1. A light-emitting device, comprising:
a substrate comprising an upper surface, wherein the upper surface comprises an ion implantation region;
a semiconductor layer formed on the upper surface;
a light-emitting stack formed on the semiconductor layer;
a plurality of scattering cavities formed between the semiconductor layer and the upper surface in accordance with the ion implantation region; and
a barrier section distributed in the semiconductor layer.
2. The light-emitting device according to claim 1 , wherein the substrate is a single layer.
3. The light-emitting device according to claim 1 , wherein the substrate comprises a single-crystalline material and the light-emitting stack comprises nitride based semiconductor.
4. The light-emitting device according to claim 1 , wherein the scattering cavities are formed on the upper surface of the substrate rather than the ion implantation region.
5. The light-emitting device according to claim 1 , wherein the scattering cavities are formed on the ion implantation region.
6. The light-emitting device according to claim 1 , wherein the ion implantation region is formed by ion implantation dose between 1E 15 ions/cm 2 and 1E 17 ions/cm 2 .
7. The light-emitting device according to claim 1 , wherein each of the scattering cavities has a bottom surface being a region of the upper surface of the substrate and a side surface connected to the bottom surface.
8. The light-emitting device according to claim 1 , wherein the barrier section is non-crystalline.
9. The light-emitting device according to claim 1 , wherein the barrier section surrounds each of the scattering cavities from top view.
10. The light-emitting device according to claim 1 , wherein the barrier section comprises SiNx.
11. The light-emitting device according to claim 1 , wherein the light-emitting stack comprises GaN.
12. The light-emitting device according to claim 1 , wherein the light-emitting stack comprises a first side adjacent to the upper surface of the substrate and a second side opposite to the first side, and the second side comprises an uneven structure scattering the light emitted from the light-emitting stack.