NANOCRYSTALLINE ZINC OXIDE FOR PHOTOVOLTAIC MODULES

1 . A method for fabricating a thin film solar device, comprising:

providing a substrate having a base layer of transparent conductive oxide (TCO) deposited on a surface of the substrate;

performing a surface treatment process on at least a portion of the base layer to provide a treated surface of the base layer; and

depositing at least one fill layer on the treated surface of the base layer by growing a new TCO layer having a different crystallite path than the base layer.

2 . The method of claim 1 , wherein the at least one fill layer is a plurality of fill layers comprising a first fill layer having a thickness which is less than a thickness of said base layer, and having a grain size which is less than a grain size of the base layer.

3 . The method of claim 2 , wherein:

said providing comprises depositing a base layer of ZnO using diethyl zinc (DEZ) and water (H 2 O) in a chemical vapor deposition process at a first process condition, and

said depositing at least one fill layer comprises depositing a fill layer of ZnO using diethyl zinc (DEZ) and water (H 2 O) in a chemical vapor deposition process at a second process condition.

4 . The method of claim 3 , further comprising:

selecting said first process condition to achieve a first film haze in said base layer greater than 20%; and

selecting said second process condition to achieve a second film haze less than said first film haze.

5 . The method of claim 2 , wherein a thickness of said base layer is greater than or equal to about 1 micron, and said thickness of said first fill layer is less than 500 nm.

6 . The method of claim 5 , wherein said thickness of said base layer ranges from about 1.4 microns to about 3 microns, and said thickness of said first fill layer ranges from about 6 nm to about 250 nm.

7 . The method of claim 2 , wherein a thickness of said at least one fill layer is less than or equal to about one half of a thickness of said base layer.

8 . The method of claim 1 , wherein:

said depositing at least one fill layer comprises forming a plurality of fill layers on the base layer; and

performing said surface treatment process on at least a portion of each fill layer prior to depositing a subsequent fill layer thereon.

9 . The method of claim 8 , wherein a thickness of each subsequent fill layer is less than or equal to about half of the thickness of a preceding fill layer.

10 . The method of claim 1 , wherein said treating said exposed surface of said base layer comprises exposing said base layer to a dopant containing Boron.

11 . The method of claim 10 , wherein said treating said exposed surface of said base layer comprises exposing said base layer to diborane gas.

12 . The method of claim 11 , wherein water vapor is introduced with said diborane gas.

13 . The method of claim 12 , further comprising:

selecting a flow ratio between a flow rate of water vapor and a flow rate of diborane to achieve a film haze less than about 10% in said at least one fill layer.

14 . The method of claim 1 , wherein:

said providing a base layer comprises depositing said base layer by flowing diethyl zinc (DEZ) and water (H 2 O) into a vacuum environment and heating said substrate;

said performing a surface treatment comprises terminating a flow of said DEZ after depositing said base layer, and introducing diborane gas for a treatment time duration; and

said depositing at least one fill layer comprises restarting a flow of DEZ and water.

15 . The method of claim 14 , further comprising:

purging said vacuum environment of DEZ by evacuating said vacuum environment for a pre-treatment time duration following said terminating and prior to introducing said diborane.

16 . The method of claim 15 , further comprising:

purging said vacuum environment of diborane gas by evacuating said vacuum environment for a post-treatment time duration immediately following said introducing said diborane for said treatment time duration.

17 . The method of claim 14 , wherein a flow of said diborane gas is increased in excess of 1000 sccm during said treating.

18 . The method of claim 14 , wherein a pressure of said vacuum environment is elevated over a pressure of said vacuum environment during said depositing of said base layer.

19 . A transparent conductive oxide (TCO) layer, comprising:

a base layer having a first grain size and being characterized by a first thickness; and

at least one fill layer having a second grain size and being characterized by a second thickness,

wherein said second thickness is less than said first thickness, and said second grain size is less than said first grain size.

20 . The TCO layer of claim 19 , wherein an interfacial region between said base layer and said at least one fill layer is doped with Boron.