Integrated circuit with ion sensitive sensor and manufacturing method
Disclosed is an integrated circuit comprising a substrate ( 10 ) carrying plurality of circuit elements ( 20 ); a metallization stack ( 30 ) over said substrate for providing interconnections to at least some of said circuit elements, the metallization stack comprising a plurality of patterned metal layers ( 31 ) spatially separated from each other by respective electrically insulating layers ( 32 ), at least some of said electrically insulating layers comprising conductive portions ( 33 ) that electrically interconnect portions of adjacent metal layers, wherein at least one of the patterned metallization layers comprises a plurality of ion-sensitive electrodes ( 34 ), each ion-sensitive electrode being electrically connected to at least one of said circuit elements, a plurality of sample volumes ( 50 ) extending into said metallization stack, each sample volume terminating at one of said ion-sensitive electrodes; and an ion-sensitive layer lining at least the ion-sensitive electrodes in said sample volumes. A method of manufacturing such an IC is also disclosed.
1. An integrated circuit comprising:
a substrate carrying plurality of circuit elements;
a metallization stack over said substrate for providing interconnections to at least some of said circuit elements, the metallization stack comprising a plurality of patterned metal layers spatially separated from each other by respective electrically insulating layers, at least some of said electrically insulating layers comprising conductive portions that electrically interconnect portions of adjacent metal layers, wherein at least one of the patterned metallization layers comprises a plurality of ion-sensitive electrodes, each ion-sensitive electrode being electrically connected to at least one of said circuit elements;
wherein the metallization stack further comprises a first patterned metal layer and a second patterned metal layer over the first patterned metal layer, said first patterned metal layer comprising the plurality of ion-sensitive electrodes and the second patterned metal layer comprising a plurality of further apertures;
a plurality of sample volumes extending into said metallization stack, each sample volume terminating at one of said ion-sensitive electrodes, each sample volume extending towards at least one of said ion-sensitive electrodes from one of said further apertures;
an ion-sensitive layer lining at least the ion-sensitive electrodes in said sample volumes; and
further comprising a patterned passivation layer comprising a plurality of said apertures, each aperture forming part of a respective sample volume.
2. The integrated circuit of claim 1 , wherein the metallization stack further comprises a passivation layer formed in between adjacent metal layers.
3. The integrated circuit of claim 1 , wherein the second patterned metal layer is conductively coupled to a bias voltage source.
4. The integrated circuit of claim 1 , wherein each sample volume has tapered sidewalls.
5. The integrated circuit of claim 1 , wherein each sample volume has a rectangular cross-section.
6. The integrated circuit of claim 1 , wherein each aperture has a diameter in the range of 1-5 micron.
7. The integrated circuit of claim 1 , wherein each sample volume contains a bead, each of said beads comprising a nucleic acid chemically bound to said bead.
8. A method of manufacturing an integrated circuit, the method comprising:
providing a substrate carrying a plurality of circuit elements;
providing a metallization stack over said substrate for providing interconnections to at least some of said circuit elements, the metallization stack comprising a plurality of patterned metal layers spatially separated from each other by respective electrically insulating layers, at least some of said electrically insulating layers comprising conductive portions that electrically interconnect portions of adjacent metal layers, wherein at least one of the patterned metallization layers comprises a plurality of electrodes, each electrode being electrically connected to at least one of said circuit elements;
forming a plurality of sample volumes in said metallization stack, each sample volume terminating at one of the electrodes; and lining at least the electrode in each sample volume with a further dielectric layer, said further dielectric layer adding ion-sensitivity to said electrodes; and
wherein the metallization stack further comprises a first patterned metal layer and a second patterned metal layer over the first patterned metal layer, said first patterned metal layer comprising the plurality of electrodes and the second patterned metal layer comprising a plurality of further apertures; and
the method further comprising the step of forming the sample volumes by selectively removing part of the electrically insulating layers over said electrodes through said further apertures.
9. The method of claim 8 , further comprising depositing a passivation layer over the metallization layer, wherein the step of forming the sample volumes comprises forming said volumes through said passivation layer.
10. The method of claim 9 , further comprising planarizing the passivation layer prior to forming the sample volumes, wherein said forming step comprises forming a plurality of apertures extending through said passivation layer and terminating on one of said electrodes, each of said apertures forming at least a part of one of said sample volumes.
11. The method of claim 8 , wherein the step of forming the metallization stack further comprises forming a passivation layer in between intermediate metal layers.
12. The method of claim 8 , wherein each sample volume has tapered sidewalls and/or a rectangular cross-section.