FOUR TERMINAL TRANSISTOR
A transistor includes a substrate, a first electrically conductive material layer positioned on the substrate, and a first electrically insulating material layer is positioned on the first electrically conductive material layer. A gate includes a second electrically conductive material and a reentrant profile in which a first portion of the gate is sized and positioned to extend beyond a second portion of the gate. A second electrically insulating material layer conforms to the reentrant profile of the gate and in positioned on at least a portion of the first electrically insulating material layer. A semiconductor material layer conforms to and is in contact with the second electrically insulating material layer.
1 . A transistor comprising:
a substrate;
a first electrically conductive material layer positioned on the substrate;
a first electrically insulating material layer positioned on the first electrically conductive material layer;
a gate located on the first electrically insulating layer, the gate including a second electrically conductive material, the gate including a reentrant profile in which a first portion of the gate is sized and positioned to extend beyond a second portion of the gate;
a second electrically insulating material layer that conforms to the reentrant profile of the gate and is positioned on at least a portion of the first electrically insulating material layer; and
a semiconductor material layer that conforms to and is in contact with the second electrically insulating material layer.
2 . The transistor of claim 1 , further comprising:
a third electrically conductive material layer nonconformally positioned over and in contact with the semiconductor material layer, wherein the third electrically conductive material layer is includes a plurality of discontinuous portions.
3 . The transistor of claim 1 , wherein the substrate is flexible.
4 . The transistor of claim 1 , wherein the substrate includes a plurality of material layers.