Substrate For OLED And Method Of Manufacturing The Same
A substrate for an organic light-emitting device (OLED) and a method of manufacturing the same, in which the light extraction efficiency and process efficiency of the OLED can be improved. The substrate for an OLED that includes a base substrate, a first metal oxide thin film coating one surface of the base substrate, the first metal oxide thin film having a first texture on a surface thereof, a second metal oxide thin film coating the other surface of the base substrate, and a third metal oxide thin film coating a surface of the second metal oxide thin film.
1 . A substrate for an organic light-emitting device comprising:
a base substrate;
a first metal oxide thin film coating one surface of the base substrate, the first metal oxide thin film having a first texture on a surface thereof;
a second metal oxide thin film coating the other surface of the base substrate; and
a third metal oxide thin film coating a surface of the second metal oxide thin film.
2 . The substrate of claim 1 , wherein the first metal oxide thin film comprises an outer light extraction layer of the organic light-emitting device, the second metal oxide thin film comprises an inner light extraction layer of the organic light-emitting device, and the third metal oxide thin film comprises a transparent electrode of the organic light-emitting device.
3 . The substrate of claim 1 , wherein the second metal oxide thin film has a second texture on the surface thereof which the third metal oxide thin film coats.
4 . The substrate of claim 3 , further comprising a planarization layer between the second metal oxide thin film and the third metal oxide thin film.
5 . The substrate of claim 1 , wherein the surface of the second metal oxide thin film which the third metal oxide thin film coats comprises a flat surface.
6 . The substrate of claim 1 , wherein each of the first to third metal oxide thin films comprises include a metal oxide, a solid solution of at least two metal oxides, or a multilayer structure of at least two metal oxides selected from a group consisting of ZnO, SnO 2 , SiO 2 , Al 2 O 2 and TiO 2 .
7 . The substrate of claim 2 , wherein a haze value of the outer light extraction layer is 60% or greater, a haze value of the inner light extraction layer is 5% or greater, and a haze value of the transparent electrode is 10% or less.
8 . The substrate of claim 2 , wherein a sheet resistance of the transparent electrode is 15 Ω/□ or less.
9 . The substrate of claim 2 , wherein, in a range of visible light, a transmittance of the outer light extraction layer is 40% or greater, a transmittance of the inner light extraction layer is 50% or greater, and a transmittance of the transparent electrode is 70% or greater.
10 . The substrate of claim 2 , wherein a refractive index of the outer light extraction layer ranges from 1.4 to 3.0, a refractive index of the inner light extraction layer ranges from 1.4 to 3.0, and a refractive index of the transparent electrode ranges from 1.7 to 3.0.
11 . A method of manufacturing a substrate for an organic light-emitting device, comprising depositing at least one metal oxide thin film on each of one surface and the other surface of a base substrate via atmospheric pressure chemical vapor deposition.
12 . The method of claim 11 , wherein depositing the at least one metal oxide thin film comprises:
depositing a first metal oxide thin film on the one surface of the base substrate as an outer light extraction layer of the organic light-emitting device;
depositing a second metal oxide thin film on the other surface of the base substrate as an inner light extraction layer of the organic light-emitting device; and
depositing a third metal oxide thin film on a surface of the second metal oxide thin film as a transparent electrode of the organic light-emitting device.
13 . The method of claim 12 , wherein depositing the second metal oxide thin film and depositing the third metal oxide thin film are carried out after depositing the first metal oxide thin film, or depositing the first metal oxide thin film is carried out after depositing the second metal oxide thin film and depositing the third metal oxide thin film.
14 . The method of claim 12 , further comprising forming a planarization layer on the second metal oxide thin film between depositing the second metal oxide thin film and depositing the third metal oxide thin film.
15 . The method of claim 14 , wherein depositing the third metal oxide thin film comprises doping the third metal oxide thin film with at least one of an n-dopant that includes Ga, Al, F, Si and B or a p-dopant that includes N.
16 . The method of claim 12 , wherein depositing the first metal oxide thin film, depositing the second metal oxide thin film and depositing the third metal oxide thin film are carried out via in-line processing.
17 . The method of claim 12 , wherein each of the first to third metal oxide thin films is deposited using a metal oxide or a solid solution of at least two metal oxides selected from a group consisting of ZnO, SnO 2 , SiO 2 , Al 2 O 3 and TiO 2 .