THIN FILM TRANSISTOR AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME
An oxide semiconductor thin film transistor and a flat panel display device incorporating the same oxide semiconductor thin film transistor. The thin film transistor includes a gate electrode formed on the substrate, a gate insulating layer formed on the substrate and covering the gate electrode, an oxide semiconductor layer formed on the gate insulating layer and covering the gate electrode, a titanium layer formed in a source region and a drain region of the oxide semiconductor layer, and source and drain electrodes respectively coupled to the source region and the drain region through the titanium layer and made of copper. The titanium layer reduces the contact resistance between the source and drain electrodes made of copper and the oxide semiconductor layer, forms a stable interface junction therebetween, and blocks a diffusion of copper.
1 . A thin film transistor, comprising:
a substrate;
a gate electrode formed on the substrate;
a gate insulating layer formed on the substrate and covering the gate electrode;
an oxide semiconductor layer formed on the gate insulating layer and covering the gate electrode;
a titanium (Ti) layer formed in a source region and a drain region of the oxide semiconductor layer; and
source and drain electrodes electrically coupled to the source region and the drain region, respectively, through the titanium (Ti) layer and made of copper, wherein
the oxide semiconductor layer being made of a material selected from the group consisting of GeO 2 , ZnO, Gd 2 O 3 , and mixtures thereof doped with at least one ion selected from the group consisting of gallium (Ga), indium (In), stannum (Sn), zirconium (Zr), hafnium (Hf), cadmium (Cd), silver (Ag), and vanadium (V).
2 . The thin film transistor as claimed in claim 1 , further comprising a buffer layer formed on the substrate.
3 - 5 . (canceled)
6 . A flat panel display device, comprising:
a first substrate on which a pixel defined by a first conductive line and a second conductive line is formed;
a thin film transistor formed on the first substrate and controlling signals supplied to each pixel and a first electrode coupled to the thin film transistor is formed;
a second substrate on which a second electrode is formed; and
a liquid crystal layer injected into a space sealed between the first electrode and the second electrode,
wherein the thin film transistor comprises:
a gate electrode formed on the first substrate;
a gate insulating layer formed on the substrate and covering the gate electrode;
an oxide semiconductor layer formed on the gate insulating layer and covering the gate electrode ;
a titanium (Ti) layer formed in a source region and a drain region of the oxide semiconductor layer; and
source and drain electrodes electrically coupled to the source region and the drain region, respectively, through the titanium (Ti) layer and made of copper, wherein
the oxide semiconductor layer being made of a material selected from the group consisting of GeO 2 , ZnO, Gd 2 O 3 , and mixtures thereof doped with at least one ion selected from the group consisting of gallium (Ga), indium (In), stannum (Sn), zirconium (Zr), hafnium (Hf), cadmium (Cd), silver (Ag), and vanadium (V).
7 . The flat panel display device as claimed in claim 6 , further comprising a buffer layer formed on the first substrate.
8 . The flat panel display device as claimed in claim 6 , wherein at least one of the first conductive line and the second conductive line is made of copper.
9 - 11 . (canceled)
12 . A flat panel display device, comprising:
a first substrate on which a first conductive layer and a second conductive layer, a thin film transistor coupled between the first conductive layer and the second conductive layer, and an organic light emitting device coupled to the thin film transistor and formed of a first electrode, an organic thin film layer, and a second electrode are formed; and
a second substrate disposed to be opposed to the first substrate,
wherein the thin film transistor comprises:
a gate electrode formed on the first substrate;
a gate insulating layer formed on the substrate and covering the gate electrode;
an oxide semiconductor layer formed on the gate insulating layer and covering the gate electrode;
a titanium (Ti) layer formed in a source region and a drain region of the oxide semiconductor layer; and
source and drain electrodes coupled to the source region and the drain region through the titanium (Ti) layer and made of copper, with the oxide semiconductor layer being made of a material selected from the group consisting of GeO 2 , ZnO, Gd 2 O 3 , and mixtures thereof doped with at least one ion selected from the group consisting of gallium (Ga), indium (In), stannum (Sn), zirconium (Zr), hafnium (Hf), cadmium (Cd), silver (Ag), and vanadium (V).
13 . The flat panel display device as claimed in claim 12 , further comprising a buffer layer formed on the first substrate.
14 . The flat panel display device as claimed in claim 12 , wherein at least one of the first conductive layer and the second conductive layer is made of copper.
15 - 17 . (canceled)
18 . The thin film transistor as claimed in claim 1 , wherein the titanium (Ti) layer overlapping an entirety of bottom surfaces of the source and drain electrodes.
19 . The flat panel display device as claimed in claim 6 , wherein the titanium (Ti) layer overlapping an entirety of bottom surfaces of the source and drain electrodes.
20 . The flat panel display device as claimed in claim 12 , wherein the titanium (Ti) layer overlapping an entirety of bottom surfaces of the source and drain electrodes.