Method and structure of sensors and MEMS devices using vertical mounting with interconnections
A method and structure for fabricating sensor(s) or electronic device(s) using vertical mounting with interconnections. The method includes providing a resulting device including at least one sensor or electronic device, formed on a die member, having contact region(s) with one or more conductive materials formed thereon. The resulting device can then be singulated within a vicinity of the contact region(s) to form one or more singulated dies, each having a singulated surface region. The singulated die(s) can be coupled to a substrate member, having a first surface region, such that the singulated surface region(s) of the singulated die(s) are coupled to a portion of the first surface region. Interconnections can be formed between the die(s) and the substrate member with conductive adhesives, solder processes, or other conductive bonding processes.
1. An integrated sensor device or electronic device, the device comprising:
a substrate member having a first surface region, the substrate member having at least one contact region;
at least one singulated integrated sensor or electronic device each coupled to a die member, each die member having a singulated surface region and at least one contact region, the singulated surface region(s) being coupled to the first surface region;
at least one first conductive material formed overlying at least the contact region(s) of the singulated integrated sensor or electronic device; and
at least one second conductive material formed overlying at least a portion of the first conductive material(s).
2. The device of claim 1 further comprising at least one solder material formed overlying at least a portion the second conductive material(s).
3. The device of claim 2 wherein the solder material(s) comprises tin (Sn), silver (Ag), or a tin-silver alloy (SnAg).
4. The device of claim 2 wherein the solder material(s) are reflowed solder material(s).
5. The device of claim 2 further comprising forming at least one third conductive material overlying at least a portion of the contact region(s) of the substrate member.
6. The device of claim 5 wherein the first, second, and third conductive material(s) comprise one or more metal materials selected from a group consisting of: copper (Cu), gold (Au), silver (Ag), and tin (Sn).
7. The device of claim 5 wherein the third conductive material(s) comprise silver-filled epoxies, interposers, redistribution layers (RDLs), or metal bumps.
8. The device of claim 1 wherein the sensor(s) or electronic device(s) comprise CMOS integrated circuit device(s), MEMS device(s), magneto-resistive device(s), or integrated MEMS-CMOS device(s).
9. The device of claim 1 wherein the magneto-resistive device(s) comprise anisotropic magneto-resistive (AMR), ordinary magneto-resistive (OMR), giant magneto-resistive (GMR), or tunnel junction magneto-resistive (TMR) device(s).
10. The device of claim 1 wherein the first conductive material(s) comprise silver-filled epoxies, interposers, redistribution layers (RDLs), or metal bumps.
11. The device of claim 1 wherein the second conductive material(s) comprise silver-filled epoxies, interposer(s), redistribution layers (RDLs), or metal bumps.