IP Library Granted Patent US 9,088,056
Granted Patent B2
US 9,088,056 · App. 13/923,431 · Granted Jul 21, 2015

Power storage unit and solar power generation unit

Inventors: Minoru Takahashi (Nagano, JP); Shunpei Yamazaki (Tokyo, JP); Masaaki Hiroki (Kanagawa, JP); Kei Takahashi (Kanagawa, JP); Junpei Momo (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01M10/502H01M10/443H01M10/5026H01M10/052
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Quick Facts
Patent No.
US 9,088,056
App. No.
13/923,431
Granted
Jul 21, 2015
Kind
B2
Abstract

Disclosed is a power storage unit which can safely operate over a wide temperature range. The power storage unit includes: a power storage device; a heater for heating the power storage device; a temperature sensor for sensing the temperature of the power storage device; and a control circuit configured to inhibit charge of the power storage device when its temperature is lower than a first temperature or higher than a second temperature. The first temperature is exemplified by a temperature which allows the formation of a dendrite over a negative electrode of the power storage device, whereas the second temperature is exemplified by a temperature which causes decomposition of a passivating film formed over a surface of a negative electrode active material.

Claims (25)

1. A power storage unit comprising:

a power storage device;

a first transistor;

a second transistor;

a first diode;

a second diode;

a heater; and

a temperature sensor;

wherein:

a positive electrode of the power storage device is electrically connected to a drain of the first transistor and an anode of the first diode;

a negative electrode of the power storage device is electrically connected to a first terminal of the temperature sensor, an anode of the second diode, and a source of the second transistor;

a cathode of the second diode is electrically connected to a drain of the second transistor and a second terminal of the heater;

a gate of the second transistor is electrically connected to a gate of the first transistor; and

a first terminal of the heater is electrically connected to a source of the first transistor and a cathode of the first diode.

2. The power storage unit according to claim 1 ,

wherein the heater is a positive temperature coefficient thermistor.

3. The power storage unit according to claim 2 ,

wherein a Curie temperature of the positive temperature coefficient thermistor is arranged to be a temperature under which a dendrite of lithium is formed by charging of the power storage device.

4. The power storage unit according to claim 3 ,

wherein the temperature is higher than or equal to 0° C. and lower than or equal to 10° C.

5. The power storage unit according to claim 1 ,

wherein the power storage device is a lithium secondary battery.

6. The power storage unit according to claim 1 ,

wherein the temperature sensor is a negative temperature coefficient thermistor.

7. A solar power generation unit including the power storage unit according to claim 1 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 21, 2013
From: TAKAHASHI, MINORU; YAMAZAKI, SHUNPEI; HIROKI, MASAAKI; TAKAHASHI, KEI; MOMO, JUNPEI
To: SEMICONDUCTOR ENERY LABORATORY CO., LTD.
Reel/Frame 030658/0706 →
Priority Claims (1)
JP 2012-143765 · Jun 27, 2012 · national
Continuity (1)
Related Publication 20140004393A1 · Jan 2, 2014