Granted Patent B2

US 9,871,154 · App. 13/923,644 · Granted Jan 16, 2018

Abstract

Claims (44)

1. A photovoltaic device, comprising:

a layer stack, wherein the layer stack comprises a plurality of transparent layers;

an absorber layer comprising cadmium, tellurium, and selenium disposed on the layer stack; and

a semiconductor layer disposed on the absorber layer, wherein a valence band offset between the semiconductor layer and the absorber layer is less than about 1.3 electron Volts, and a band gap of the semiconductor layer is in a range from about 1.2 electron Volts to about 3.5 electron Volts;

wherein the absorber layer is between the layer stack and the semiconductor layer;

wherein the semiconductor layer has an offset in conduction band energy level relative to that of the absorber layer; and

wherein the semiconductor layer comprises Cd x M 1-x Te, wherein x is a number in a range from 0 to 1, Cd is cadmium, Te is tellurium, and M comprises a divalent metal.

2. The photovoltaic device of claim 1 , wherein an atomic concentration of selenium is substantially constant across a thickness of the absorber layer.

3. The photovoltaic device of claim 1 , wherein an atomic concentration of selenium varies across a thickness of the absorber layer.

4. The photovoltaic device of claim 1 , wherein an atomic concentration of selenium varies non-linearly across a thickness of the absorber layer.

5. The photovoltaic device of claim 1 , wherein the absorber layer further comprises sulfur, oxygen, copper, chlorine, or combinations thereof.

6. The photovoltaic device of claim 1 , wherein the absorber layer comprises a first region and a second region, the first region disposed proximate to the layer stack relative to the second region, and

wherein an average atomic concentration of selenium in the first region is greater than an average atomic concentration of selenium in the second region.

7. The photovoltaic device of claim 1 , wherein the absorber layer comprises a first region and a second region, the first region disposed proximate to the layer stack relative to the second region, and

wherein an average atomic concentration of selenium in the first region is lower than an average atomic concentration of selenium in the second region.

8. The photovoltaic device of claim 6 , wherein the second region comprises cadmium telluride.

9. The photovoltaic device of claim 1 , wherein x is 0.

10. The photovoltaic device of claim 1 , wherein M comprises manganese, magnesium, zinc, or combinations thereof.

11. The photovoltaic device of claim 1 , wherein the semiconductor layer comprises zinc telluride, cadmium manganese telluride, or combinations thereof.

12. The photovoltaic device of claim 1 , wherein the semiconductor layer is p-doped.

13. The photovoltaic device of claim 1 , wherein the semiconductor layer is substantially intrinsic.

14. The photovoltaic device of claim 1 , wherein a valence band offset between the semiconductor layer and the absorber layer is in a range from about 0 electron Volts to about 0.45 electron Volts.

15. The photovoltaic device of claim 1 , wherein a band gap of the semiconductor layer is in a range from about 1.6 electron Volts to about 2.7 electron Volts.

16. The photovoltaic device of claim 1 , wherein the layer stack comprises:

a transparent conductive layer disposed on a support; and

a buffer layer disposed between the transparent conductive layer and the absorber layer.

17. The photovoltaic device of claim 16 , wherein the layer stack further comprises an interlayer disposed between the buffer layer and the absorber layer.

18. The photovoltaic device of claim 16 , wherein the layer stack further comprises a window layer disposed between the buffer layer and the absorber layer.

19. The photovoltaic device of claim 18 , wherein the window layer comprises cadmium sulfide, oxygenated cadmium sulfide, zinc sulfide, cadmium zinc sulfide, cadmium selenide, indium selenide, indium sulfide, or combinations thereof.

20. The photovoltaic device of claim 1 , wherein the device is substantially free of a cadmium sulfide layer.

21. The photovoltaic device of claim 1 , further comprising a back contact layer disposed on the semiconductor layer, wherein the back contact layer comprises a metal, copper-doped elemental tellurium, graphite, or combinations thereof.

22. A photovoltaic device, comprising:

a layer stack, wherein the layer stack comprises a plurality of transparent layers;

an absorber layer comprising CdSe z Te 1-z disposed on the layer stack, wherein “z” is a number in a range from about 0 to about 1; and

a semiconductor layer disposed directly in contact with the absorber layer, wherein a valence band offset between the absorber layer and the semiconductor layer is less than about 1.3 electron Volts, and a band gap of the semiconductor layer is in a range from about 1.6 electron Volts to about 2.7 electron Volts;

wherein the absorber layer is between the layer stack and the semiconductor layer; and

wherein the semiconductor layer has an offset in conduction band energy level relative to that of the absorber layer.

23. A photovoltaic device, comprising:

a layer stack, wherein the layer stack comprises a plurality of transparent layers;

an absorber layer comprising selenium disposed on the layer stack, wherein a concentration of selenium varies across a thickness of the absorber layer;

a semiconductor layer disposed directly in contact with the absorber layer, wherein a valence band offset between the absorber layer and the semiconductor layer is less than about 0.45 electron Volts, and a band gap of the semiconductor layer is in a range from about 1.6 electron Volts to about 2.7 electron Volts; and

an interfacial layer interposed between the absorber layer and the semiconductor layer;

wherein the absorber layer is between the layer stack and the semiconductor layer.

24. The photovoltaic device of claim 1 , further comprising an interfacial layer interposed between the absorber layer and the semiconductor layer.

Assignments (8)