Nanocrystalline copper oxide and method for the production thereof
View Patent ↗A nanocrystalline supported or unsupported copper oxide with a residual carbon content of <10% and a BET surface area >95 m 2 /g. Further, a method for the production of a supported, or unsupported nanocrystalline copper oxide is disclosed, as well as the use thereof in catalysis, in particular in the steam reforming of methanol or in the hydrogenation of esters.
1. A method for the production of nanocrystalline copper oxide with a BET surface area >95 m 2 /g comprising:
a) introducing a copper starting compound into a reaction chamber by means of a carrier fluid, wherein the copper starting compound is introduced into the reaction chamber in the form of a solution, a slurry, a suspension or in a solid aggregate state,
b) subjecting the copper starting compound to pulsating thermal treatment in a treatment zone of the reaction chamber at a temperature of from 200 to 500° C.,
c) forming a nanocrystalline copper oxide material, and
d) discharging the nanocrystalline copper oxide material from the reactor.
2. The method according to claim 1 , wherein the copper starting compound is provided as the suspension with an average particle size of <10 μm.
3. The method according to claim 2 , wherein the average particle size is obtained by grinding the copper starting compound before producing the suspension.
4. The method according to claim 1 , wherein the copper starting compound is used as the solution.
5. The method according to claim 1 , wherein, as the copper starting compound, a compound selected from the group consisting of a copper salt of an organic acid, a hydroxide, a nitrate, a carbonate, and a hydroxocarbonate or mixtures thereof is used.
6. The method according to claim 5 , wherein, as organic acid, an organic acid with fewer than 9 carbon atoms is used.
7. The method according to claim 6 , wherein the organic acid is selected from the group consisting of glyoxalic acid, oxalic acid, and citric acid.
8. The method according to claim 1 , wherein, in addition to the copper starting compound, further compounds are also used.
9. The method according to claim 8 , wherein the further compounds are selected from the group consisting of compounds of silicon, tin, magnesium, titanium, aluminium, zirconium, and zinc and mixtures thereof.