Power management in multi-die assemblies

1. An apparatus comprising:

a first inductive element and a second inductive element, a first node of the first inductive element to receive an input voltage;

a plurality of die;

switch control circuitry, the switch control circuitry disposed in a first die of the apparatus, the switch control circuitry to control current received from the input voltage and conveyed through the first inductive element and the switch control circuitry to convert the input voltage into a first voltage output from a second node of the first inductive element; and

the second inductive element coupled to receive the first voltage and produce a second voltage, the second voltage to power a second die in the apparatus.

2. The apparatus as in claim 1 , wherein the first inductive element is magnetically coupled to the second inductive element.

3. The apparatus as in claim 1 , wherein the first voltage is to power the first die;

wherein the first inductive element and the second inductive element are disposed on the first die; and

wherein a magnitude of the second voltage is greater than a magnitude of the first voltage.

4. The apparatus as in claim 2 , wherein the second die is stacked on the first die; and

wherein a magnitude of the second voltage is greater than a magnitude of the first voltage.

5. The apparatus as in claim 1 , wherein the first die includes a set of storage cells, the set of storage cells in the first die storing first data; and

wherein the second die includes a set of storage cells, the set of storage cells in the second die to store second data.

6. The apparatus as in claim 1 , wherein the first inductive element and the second inductive element are disposed in the first die.

7. The apparatus as in claim 1 , wherein the first die and the second die are disposed in a vertical memory stack in which a planar facing of the first die is substantially in contact with a planar facing of the second die, the apparatus further comprising:

a conductive link extending from the first die to the second die, the conductive link to convey the second voltage from the second inductive element to a diode disposed in the second die.

8. The apparatus as in claim 7 , wherein the conductive link is to convey the second voltage from an output node of the second inductive element to an anode of the diode.

9. The apparatus as in claim 1 ,

wherein the magnitude of the first voltage is greater than the magnitude of the input voltage.

10. The apparatus as in claim 1 further comprising:

a host substrate, the first die and the second die disposed adjacent to each other on a facing of the host substrate; and

a conductive link extending on the facing of the host substrate from the first die to the second die, the conductive link to convey the second voltage from the second inductive element to a diode disposed in the second die.

11. The apparatus as in claim 10 , wherein the first inductive element and the second inductive element are disposed on the host substrate.

12. The apparatus as in claim 1 , wherein the first die comprises a first DRAM (Dynamic Random Access Memory) device; and

wherein the second die comprises a second DRAM (Dynamic Random Access Memory) device.

13. The apparatus as in claim 1 , wherein a magnitude of the second voltage is greater than a magnitude of the first voltage;

wherein the first die includes a first set of semiconductor components, the first set of semiconductor components fabricated in accordance with a first fabrication technology, the semiconductor components in the first set tolerable of application of a first maximum threshold voltage;

wherein the second die includes a second set of semiconductor components, the second set of semiconductor components fabricated in accordance with a second fabrication technology, the semiconductor components in the second set tolerable of application of a second maximum threshold voltage;

wherein the magnitude of the first voltage is less than the first maximum threshold voltage;

wherein the magnitude of the second voltage is greater than the first maximum threshold voltage; and

wherein the magnitude of the second voltage is less than the second maximum threshold voltage.

14. The apparatus as in claim 13 , wherein the semiconductor components in the first set are electrically isolated from the second voltage to prevent damage to the semiconductor components in the first set;

wherein the first voltage is used to perform memory storage operations with respect to storage cells in the first die; and

wherein the second voltage is used to perform memory storage operations with respect to storage cells in the second die.

15. The apparatus as in claim 1 further comprising:

a first conductive link extending from the first die to the second die, the first conductive link to convey the second voltage from the first die to a switch component disposed in the second die; and

a second conductive link extending from the first die to the second die, the second conductive link to convey a switch control signal produced by the switch control circuitry to the switch component, the switch control signal to control a state of the switch component.

16. The apparatus as in claim 1 further comprising:

a monitor circuit, the monitor circuit to monitor a magnitude of the first voltage as feedback; and

the switch control circuitry controlling to control switching of the current through the first inductive element to produce the first voltage within a desired voltage range.

17. The apparatus as in claim 1 further comprising:

a monitor circuit, the monitor circuit to monitor a magnitude of the second voltage as feedback; and

the switch control circuitry to control switching of the current through the second inductive element to produce the second voltage within a desired voltage range.

18. The apparatus as in claim 1 further comprising:

a switch controlled by the switching circuitry, the switch disposed between the first inductive element and the second inductive element, the switch to provide the first voltage to power the first die, the second inductive element to receive the first voltage and producing the second voltage to power the second die.

19. A computer system including the apparatus in claim 1 , the computer system further comprising:

host computer processor hardware configured to manage settings of corresponding data stored in storage cells of the first die and storage cells in the second die.

20. The computer system as in claim 19 further comprising:

a display screen on which to render an image based at least in part on the corresponding data stored in the apparatus; and

a network interface communicatively coupled to the host computer.

21. The apparatus as in claim 1 further comprising:

a physical conductive link extending from the first die to the second die, the physical conductive link to convey the second voltage from the second inductive element to a diode disposed in the second die.

22. The apparatus as in claim 21 , wherein the first die is fabricated using a first technology in which circuit components in the first die tolerate a first maximum voltage level, the first voltage less than the first maximum voltage; and

wherein the second die is fabricated using a second technology in which circuit component in the second die tolerate a second maximum voltage level, the first maximum voltage level different than the second maximum voltage level, the second voltage less than the second voltage.

23. A method, comprising:

receiving an input voltage;

controlling a flow of current received from the input voltage through a first inductive element via switching circuitry disposed on a first die of an assembly, the control of the current through the first inductive element converting the input voltage into a first voltage outputted from the first inductive element;

deriving a second voltage via current supplied from the first voltage through a second inductive element; and

conveying the second voltage to a second die in the assembly, the second voltage powering circuitry in the second die.

24. The method as in claim 23 further comprising:

producing the second voltage to be greater than a magnitude of the first voltage, the first voltage powering circuitry on the first die.

25. The method as in claim 23 , wherein the first inductive element and the second inductive element are disposed in the first die.

26. The method as in claim 23 further comprising:

monitoring a magnitude of the first voltage as feedback; and

controlling switching of the current through the first inductive element to produce the first voltage within a desired voltage range.

27. The apparatus as in claim 23 , wherein the first die and the second die are disposed in a vertical memory stack in which a planar facing of the first die is substantially in contact with a planar facing of the second die, the method further comprising:

conveying the second voltage from the second inductive element over a physical conductive link to a diode disposed in the second die.

28. The method as in claim 23 further comprising:

providing a physical conductive link to extend from the first inductive element to the second inductive element, the physical conductive link conveying the first voltage to the second inductive element.

29. The method as in claim 23 , wherein a magnitude of the first voltage is different than a magnitude of the input voltage; and

wherein a magnitude of the second voltage is different than the magnitude of the first voltage.