Solid-state image pickup device, method of manufacturing solid-state image pickup device, and electronic apparatus

1. A solid-state image pickup device comprising:

a semiconductor substrate; and

a plurality of pixel portions that are provided on the semiconductor substrate,

wherein each of the pixel portions includes

a photoelectric converting unit that generates a charge on the basis of incident light,

a memory unit that accumulates the charge generated by the photoelectric converting unit,

a light shielding portion that shields at least the memory unit from light,

a digging portion that digs into the semiconductor substrate between the photoelectric converting unit and the memory unit and is formed of a light shielding material, and

a transmitting unit that transmits the charge from the photoelectric converting unit to the memory unit, by forming a channel for transmission in the digging portion.

2. The solid-state image pickup device according to claim 1 ,

wherein the digging portion is formed as a part of the light shielding portion between the photoelectric converting unit and the transmitting unit,

wherein the transmitting unit is a transistor having a gate electrode, and

wherein the gate electrode and the light shielding portion are connected to form the channel for the transmission.

3. The solid-state image pickup device according to claim 2 ,

wherein each of the pixel portions further includes a contact portion that connects the gate electrode to a wiring line, and

wherein the contact portion is formed on the light shielding portion.

4. The solid-state image pickup device according to claim 1 ,

wherein the transmitting unit is a transistor having a gate electrode functioning as the digging portion.

5. The solid-state image pickup device according to claim 4 ,

wherein each of the pixel portions further includes a contact portion that connects the gate electrode to a wiring line, and

wherein the contact portion is formed on the gate electrode through a hole formed in the light shielding portion.

6. The solid-state image pickup device according to claim 1 ,

wherein the photoelectric converting unit is formed to be stacked in a plurality of steps in the semiconductor substrate.

7. The solid-state image pickup device according to claim 1 ,

wherein the transmitting unit is a transistor having a gate electrode,

wherein the digging portion has a first digging portion formed as a part of the light shielding portion between the photoelectric converting unit and the transmitting unit and a second digging portion formed in the gate electrode, and

wherein the gate electrode and the light shielding portion are connected to form the channel for the transmission.

8. The solid-state image pickup device according to claim 7 ,

wherein each of the pixel portions further includes a contact portion that connects the gate electrode to a wiring line, and

wherein the contact portion is formed on the light shielding portion.

9. The solid-state image pickup device according to claim 7 ,

wherein each of the pixel portions further includes a contact portion that connects the gate electrode to a wiring line, and

wherein the contact portion is formed on the gate electrode through a hole formed in the light shielding portion.

10. The solid-state image pickup device according to claim 1 ,

wherein the digging portion is formed to surround the photoelectric converting unit, and

wherein the channel for the transmission in the transmitting unit is formed in a region of the digging portion between the photoelectric converting unit and the memory unit.

11. The solid-state image pickup device according to claim 10 ,

wherein each of the pixel portions further includes a transistor having an overflow gate that, when charges of an amount equal to or more than a predetermined charge amount are generated in the photoelectric converting unit, discharges a part of the charges to a power supply potential, and

wherein the digging portion is not formed or digs to be shallower than another place, in a channel forming region with respect to the overflow gate.

12. The solid-state image pickup device according to claim 10 ,

wherein each of the pixel portions further includes a transistor having an overflow gate that, when charges of an amount equal to or more than a predetermined charge amount are generated in the photoelectric converting unit, discharges a part of the charges to a power supply potential, and

wherein the digging portion is further formed in the overflow gate.

13. A method of manufacturing a solid-state image pickup device, comprising:

manufacturing a semiconductor substrate; and

manufacturing a plurality of pixel portions provided on the semiconductor substrate,

wherein each of the pixel portions includes a photoelectric converting unit that generates a charge on the basis of incident light, a memory unit that accumulates the charge generated by the photoelectric converting unit, a light shielding portion that shields at least the memory unit from light, a digging portion that digs into the semiconductor substrate between the photoelectric converting unit and the memory unit and is formed of a light shielding material, and a transmitting unit that transmits the charge from the photoelectric converting unit to the memory unit, by forming a channel for transmission in the digging portion.

14. An electronic apparatus comprising:

a solid-state image pickup device,

wherein the solid-state image pickup device includes a semiconductor substrate and a plurality of pixel portions that are provided on the semiconductor substrate, and

wherein each of the pixel portions includes a photoelectric converting unit that generates a charge on the basis of incident light, a memory unit that accumulates the charge generated by the photoelectric converting unit, a light shielding portion that shields at least the memory unit from light, a digging portion that digs into the semiconductor substrate between the photoelectric converting unit and the memory unit and is formed of a light shielding material, and a transmitting unit that transmits the charge from the photoelectric converting unit to the memory unit, by forming a channel for transmission in the digging portion.