Method of programming/reading a non-volatile memory with a sequence
View Patent ↗A method of programming/reading a multi-bit per cell non-volatile memory with a sequence is disclosed. A plurality of less-significant-bit pages are programmed, and a plurality of consecutive most-significant-bit pages of a plurality of consecutive word lines are programmed one after the other in a consecutive order. The most-significant-bit pages through all word lines in at least one memory block of the non-volatile memory are programmed or read after the less-significant-bit pages through all the word lines in the at least one memory block are programmed or read.
1. A method of programming a multi-bit per cell non-volatile memory with a sequence, comprising:
programming a plurality of less-significant-bit pages; and
programming a plurality of consecutive most-significant-bit pages of a plurality of consecutive word lines one after the other in a consecutive order;
wherein the most-significant-bit pages through all word lines in a memory block of the non-volatile memory are programmed after the less-significant-bit pages through all the word lines in the memory block are programmed.
2. The method of claim 1 , wherein the multi-bit per cell non-volatile memory is a two-bit cell flash memory, a three-bit per cell flash memory or a four-bit cell flash memory.
3. The method of claim 1 , wherein the step of programming the less-significant-bit pages comprises:
programming low-bit pages through all word lines in a memory block of the non-volatile memory; and
programming the less-significant-bit pages other than the low-bit pages through all the word lines in the memory block of the non-volatile memory.
4. The method of claim 3 , wherein the step of programming the consecutive most-significant-bit pages comprises:
programming high-bit pages through all the word lines in the memory block of the non-volatile memory.
5. A method of programming a multi-bit per cell non-volatile memory with a sequence, comprising:
programming a plurality of less-significant-bit pages in a memory block; and
programming a plurality of most-significant-bit pages of a plurality of consecutive word lines one after the other in a consecutive order in the memory block;
wherein the programmed less-significant-bit pages constitute less than the whole of the memory block before programming the most-significant-bit pages of the plurality of consecutive word lines.
6. The method of claim 5 , wherein the multi-bit per cell non-volatile memory is a two-bit per cell flash memory, a three-bit per cell flash memory or a four-bit per cell flash memory.
7. A method of reading a multi-bit per cell non-volatile memory with a sequence, comprising:
reading a plurality of less-significant-bit pages through a plurality of consecutive word lines in a memory block of the multi-bit per cell non-volatile memory; and
reading a plurality of most-significant-bit pages through the plurality of consecutive word lines in the memory block of the multi-bit per cell non-volatile memory.
8. The method of claim 7 , wherein the step of reading the less-significant-bit pages comprises:
reading low-bit pages through all word lines in a memory block of the non-volatile memory; and
reading the less-significant-bit pages other than the low-bit pages through all the word lines in the memory block of the non-volatile memory.
9. The method of claim 7 , wherein the step of reading the consecutive most-significant-bit pages comprises:
reading high-bit pages through all the word lines in the a memory block of the non-volatile memory.
10. The method of claim 7 , wherein the multi-bit per cell non-volatile memory is a two-bit per cell flash memory, a three-bit per cell flash memory or a four-bit per cell flash memory.