IP Library Granted Patent US 9,059,340
Granted Patent B2
US 9,059,340 · App. 13/928,959 · Granted Jun 16, 2015

Method of manufacturing solar cell and solar cell

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Quick Facts
Patent No.
US 9,059,340
App. No.
13/928,959
Granted
Jun 16, 2015
Kind
B2
Abstract

Provided is a method capable of easily manufacturing a back contact solar cell with high photoelectric conversion efficiency. A semiconductor layer having a first conductivity which is the same as that of a semiconductor substrate is formed substantially entirely on the principal surface of the semiconductor substrate inclusive of a surface of an insulation layer. A portion of the semiconductor layer located on the insulation layer is removed, and thereby an opening is formed. The insulation layer exposed through the opening is removed while the semiconductor layer is used as a mask, and thereby a surface of a first semiconductor region is partially exposed. Electrodes which are electrically connected to the surface of the first semiconductor region and to a surface of the semiconductor layer respectively are formed.

Claims (19)

1. A method of manufacturing a solar cell comprising the steps of:

preparing a semiconductor substrate of first conductivity including

a first semiconductor region of second conductivity provided in a portion of a principal surface of the semiconductor substrate, and

an insulation layer provided on a surface of the first semiconductor region,

forming a second semiconductor layer of the first conductivity substantially entirely on the principal surface inclusive of a surface of the insulation layer,

removing a portion of the second semiconductor layer located on the insulation layer with a first etching agent whose etching rate is higher for the second semiconductor layer than for the insulation layer and thereby forming an opening,

removing the insulation layer exposed through the opening with a second etching agent whose etching rate is higher for the insulation layer than for the second semiconductor layer while using the second semiconductor layer as a mask and thereby partially exposing the surface of the first semiconductor region, and

forming electrodes electrically connected to the surface of the first semiconductor region and to a surface of the second semiconductor layer, respectively.

2. The method of manufacturing a solar cell according to claim 1 , wherein the first semiconductor region is formed of a first semiconductor layer formed on the portion of the principal surface.

3. The method of manufacturing a solar cell according to claim 2 , wherein the second semiconductor layer is formed in such a way that the principal surface of the semiconductor substrate is substantially entirely covered with the first semiconductor layer or the second semiconductor layer.

4. The method of manufacturing a solar cell according to claim 3 , wherein each of the first and second semiconductor layers is made of amorphous silicon containing hydrogen, and the insulation layer is made of silicon nitride, silicon oxide, or silicon oxynitride.

5. The method of manufacturing a solar cell according to claim 1 , wherein the first semiconductor region is formed by diffusing a dopant of the second conductivity in the portion of the principal surface.

6. The method of manufacturing a solar cell according to claim 4 , further comprising the step of forming an intrinsic amorphous silicon layer between the principal surface of the semiconductor substrate and each of the first and second semiconductor layers.

7. The method of manufacturing a solar cell according to claim 4 , wherein the step of forming the electrodes includes the steps of:

forming a first conductive layer over the surface of the first semiconductor region, the surface of the second semiconductor layer, and the surface of the insulation layer, and

dividing a portion of the first conductive layer located above the insulation layer, and thereby electrically isolating a portion of the first conductive layer formed on the first semiconductor region, from a portion of the first conductive layer formed on the second semiconductor layer.

8. The method of manufacturing a solar cell according to claim 7 , wherein the step of forming the electrodes includes the step of

forming a second conductive layer on each of the portion of the first conductive layer formed on the first semiconductor region, and the portion of the first conductive layer formed on the second semiconductor layer.

9. The method of manufacturing a solar cell according to claim 1 , wherein the second etching agent comprises an acid suitable to remove the insulation layer.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 24, 2015
From: SANYO ELECTRIC CO., LTD.
To: PANASONIC CORPORATION
Reel/Frame 035071/0276 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 24, 2015
From: PANASONIC CORPORATION
To: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
Reel/Frame 035071/0508 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 27, 2013
From: TAKAHAMA, TSUYOSHI
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 030700/0346 →