Semiconductor device based on power gating in multilevel wiring structure
View Patent ↗A semiconductor device includes: first and second circuit cell arrays extending in first direction; first and second power supply lines each extending in first direction and arranged over first circuit cell array, first power supply line being supplied with first power source voltage; third power supply line extending in first direction separately from second power supply line, arranged over second circuit cell array, and supplied with second power source voltage; first transistor coupled between second and third power supply lines; and first circuit arranged on first circuit cell array and operating on first and second power source voltages supplied from first and second power supply lines, respectively.
1. A device comprising:
a circuit unit comprising;
a first circuit cell array extending in a first direction,
a second circuit cell array extending in the first direction substantially in parallel to the first circuit cell array,
first and second power lines each of which extends in the first direction and arranged over the first circuit cell array,
third and fourth power lines each of which extends in the first direction and arranged over the second circuit cell array,
a first transistor coupled between the second and third power supply lines,
a plurality of first logic circuits arranged in the first cell array, each of the first logic circuits includes first and second power nodes coupled respectively to the first and second power lines,
a plurality of second logic circuits arranged in the second cell array, each of the second logic circuits includes third and fourth power nodes coupled respectively to the third and fourth power lines,
a first interconnection connecting an output node of a first one of the first logic circuits to an input node of a first one of the second logic circuits, and
a second interconnection connecting an output node of the first one of the second logic circuits to an input node of a second one of the first logic circuits.
2. The device as claimed in claim 1 , wherein the first one of the first logic circuits and the first one of the second logic circuits are arranged in a second direction that is substantially perpendicular to the first direction.
3. The device as claimed in claim 1 , wherein the first transistor is configured to serve as a power gating transistor.
4. The device as claimed in claim 1 , wherein the first one of the first logic circuits and the second one of the first logic circuits are arranged without an intervention of any one of the rest of the first logic circuit therebetween.
5. The device as claimed in claim 1 , further comprising a multi-level wiring structure including a first wiring layer and a second wiring layer formed over the first wiring layer, and wherein each of the first, second, third and fourth power lines is formed as the first wiring layer, and each of the first and second interconnections is formed as the second wiring layer.
6. The device as claimed in claim 1 , wherein the circuit unit further comprises a third interconnection connecting an output node of the second one of the first logic circuits to an input node of a second one of the second logic circuits.
7. The device as claimed in claim 6 , wherein the first one of the first logic circuits and the first one of the second logic circuits are arranged in a second direction that is substantially perpendicular to the first direction and the second one of the first logic circuits and the second one of the second logic circuits are arranged in the second direction.
8. The device as claimed in claim 6 , wherein the first one of the first logic circuits and the second one of the first logic circuits are arranged without an intervention of any one of the rest of the first logic circuit therebetween and the first one of the second logic circuits and the second one of the second logic circuits are arranged without an intervention of any one of the rest of the second logic circuit therebetween.
9. The device as claimed in claim 6 , further comprising a multi-level wiring structure including a first wiring layer and a second wiring layer formed over the first wiring layer, and wherein each of the first, second, third and fourth power lines is formed as the first wiring layer, and each of the first, second and third interconnections is formed as the second wiring layer.
10. The device as claimed in claim 1 , wherein the circuit unit further comprises a fifth power line extending in the first direction, and a second transistor coupled between the fourth and fifth power lines.
11. The device as claimed in claim 10 , further comprising a multi-level wiring structure including a first wiring layer and a second wiring layer formed over the first wiring layer, and wherein each of the first, second, third, fourth and fifth power lines is formed as the first wiring layer, and each of the first, second and third interconnections is formed as the second wiring layer.
12. The device as claimed in claim 1 , wherein the first power line is supplied with a first power supply voltage and the third power line is supplied with a second power supply voltage that is different from the first power supply voltage.
13. The device as claimed in claim 12 , wherein the third power line is configured to be supplied, when the first transistor is in a conductive state thereof, with the second power supply voltage and configured to be floating when the first transistor is in a non-conductive state thereof.
14. The device as claimed in claim 1 , wherein the circuit unit is configured to reduce a subthreshold leakage current of the first and second logic circuits.