Solderable contact regions
View Patent ↗A contact region for a semiconductor substrate is disclosed. Embodiments can include forming a seed metal layer having an exposed solder pad region on the semiconductor substrate and forming a first metal layer on the seed metal layer. In an embodiment, a solderable material, such as silver, can be formed on the exposed solder pad region prior to forming the first metal layer. Embodiments can include forming a solderable material on the exposed solder pad region after forming the first metal layer. Embodiments can also include forming a plating contact region on the seed metal layer, where the plating contact region allows for electrical conduction during a plating process.
1. A method for forming a contact region for a semiconductor substrate, the method comprising:
forming a seed metal layer comprising a first exposed solder pad region and a first plating contact region on the semiconductor substrate, wherein the first plating contact region allows for electrical conduction during a plating process;
forming the seed metal layer comprising a second exposed solder pad region;
forming a solderable material on the first exposed solder pad region; and
forming a first metal layer on the seed metal layer.
2. The method of claim 1 , wherein forming the first metal layer on the seed metal layer comprises plating a first metal layer on the seed metal layer.
3. The method of claim 1 , wherein forming the solderable material on the first exposed solder pad region comprises forming the solderable material on the first exposed solder pad region before forming the first metal layer.
4. The method of claim 1 , wherein forming the solderable material on the first exposed solder pad region comprises forming the solderable material on the first exposed solder pad region after forming the first metal layer.
5. The method of claim 1 , wherein forming the seed metal layer comprises forming the seed metal layer from a material selected from a group consisting of an aluminum paste, a layer of aluminum, aluminum micro-particles and aluminum nano-particles.
6. The method of claim 1 , further comprising forming the seed metal layer comprising a second plating contact region.
7. The method of claim 1 , wherein the semiconductor substrate is a silicon substrate of a solar cell.
8. The method of claim 1 , wherein forming the solderable material on the first exposed solder pad region comprises forming the solderable material having a thickness in a range of 1-10 microns.
9. The method of claim 1 , wherein forming the solderable material on the first exposed solder pad region comprises forming a material selected from a group consisting of silver and a layer of silver.
10. A method for forming a contact region for a semiconductor substrate, the method comprising:
forming a seed metal layer comprising a first exposed solder pad region and a first plating contact region on the semiconductor substrate, wherein the first plating contact region allows for electrical conduction during a plating process;
forming the seed metal layer comprising a second plating contact region;
forming a solderable material on the first exposed solder pad region; and
forming a first metal layer on the seed metal layer.
11. The method of claim 10 , wherein forming the first metal layer on the seed metal layer comprises plating the first metal layer on the seed metal layer.
12. The method of claim 10 , wherein forming the solderable material on the first exposed solder pad region comprises forming the solderable material on the first exposed solder pad region before forming the first metal layer.
13. The method of claim 10 , wherein forming the solderable material on the first exposed solder pad region comprises forming the solderable material on the first exposed solder pad region after forming the first metal layer.
14. The method of claim 10 , wherein forming the seed metal layer comprises forming the seed metal layer from a material selected from a group consisting of an aluminum paste, a layer of aluminum, aluminum micro-particles and aluminum nano-particles.
15. The method of claim 10 further comprising forming the seed metal layer comprising a second exposed solder pad region.
16. The method of claim 10 , wherein the semiconductor substrate comprises a silicon substrate of a solar cell.
17. The method of claim 10 , wherein forming the solderable material on the first exposed solder pad region comprises forming the solderable material having a thickness in a range of 1-10 microns.
18. The method of claim 10 , wherein forming the solderable material on the first exposed solder pad region comprises forming a material selected from a group consisting of silver and a layer of silver.