RF front-end with on-chip transmitter/receiver isolation using a gyrator
View Patent ↗An RF front-end with on-chip transmitter/receiver isolation using a gyrator is presented herein. The RF front end is configured to support full-duplex communication and includes a gyrator and a transformer. The gyrator includes two transistors that are configured to isolate the input of a low-noise amplifier (LNA) from the output of a power amplifier (PA). The gyrator is further configured to isolate the output of the PA from the input of the LNA. The gyrator is at least partially or fully capable of being integrated on silicon-based substrate.
1. A gyrator-based duplexer comprising:
a first transistor comprising a source, a drain coupled to a first port, and a gate coupled to a second port; and
a second transistor comprising a source, a drain coupled to the second port, and a gate coupled to the first port,
wherein the first transistor electrically isolates the first port from the second port by providing a drain-to-source current based on a voltage across the second port.
2. The gyrator-based duplexer of claim 1 , wherein an input impedance of the first port is substantially equal to a reciprocal of a transconductance of the first transistor.
3. The gyrator-based duplexer of claim 1 , wherein an input impedance of the second port is substantially equal to a reciprocal of a negative transconductance of the second transistor.
4. The gyrator-based duplexer of claim 1 , wherein the first transistor and the second transistor are metal oxide semiconductor field effect transistors (MOSFETs).
5. The gyrator-based duplexer of claim 4 , wherein the first transistor and the second transistor are n-channel type MOSFETs.
6. A gyrator-based duplexer comprising:
a first transistor comprising a source, a drain coupled to a first port, and a gate coupled to a second port;
a second transistor comprising a source, a drain coupled to the second port, and a gate coupled to the first port; and
a transformer comprising a primary winding and a secondary winding coupled between the first port and the second port.
7. The gyrator-based duplexer of claim 6 , wherein the first port is electrically isolated from the second port.
8. The gyrator-based duplexer of claim 6 , further comprising:
an inverting amplifier coupled between the first port and the gate of the second transistor.
9. The gyrator-based duplexer of claim 8 , wherein an input impedance of the first port is substantially equal to a reciprocal of a transconductance of the first transistor.
10. The gyrator-based duplexer of claim 9 , wherein an input impedance of the second port is substantially equal to a reciprocal of a negative transconductance of the second transistor.
11. The gyrator-based duplexer of claim 6 , wherein the first transistor and the second transistor are metal oxide semiconductor field effect transistors (MOSFETs).
12. The gyrator-based duplexer of claim 11 , wherein the first transistor and the second transistor are n-channel type MOSFETs.
13. A gyrator-based duplexer comprising:
a first transistor comprising a source, a drain coupled to a first port, and a gate coupled to a second port; and
a second transistor comprising a source, a drain coupled to the second port, and a gate coupled to the first port; and
an inverting amplifier coupled between the first port and the gate of the second transistor,
wherein the second transistor electrically isolates the second port from the first port by providing a drain-to-source current based on a voltage at the gate of the second transistor provided by the inverting amplifier.
14. The gyrator-based duplexer of claim 13 , wherein the first port is electrically isolated from the second port.
15. The gyrator-based duplexer of claim 13 , wherein an input impedance of the first port is substantially equal to a reciprocal of a transconductance of the first transistor.
16. The gyrator-based duplexer of claim 15 , wherein an input impedance of the second port is substantially equal to a reciprocal of a negative transconductance of the second transistor.
17. The gyrator-based duplexer of claim 13 , wherein the first transistor and the second transistor are metal oxide semiconductor field effect transistors (MOSFETs).
18. The gyrator-based duplexer of claim 17 , wherein the first transistor and the second transistor are n-channel type MOSFETs.
19. The gyrator-based duplexer of claim 13 , wherein the source of the first transistor is coupled to ground and the source of the second transistor is coupled to ground.
20. The gyrator-based duplexer of claim 13 , wherein the first transistor electrically isolates the first port from the second port by providing a second drain-to-source current based on a voltage across the second port.