Methods for forming a channel through a polymer layer using one or more photoresist layers
View Patent ↗A method may involve forming one or more photoresist layers over a sensor located on a structure, such that the sensor is covered by the one or more photoresist layers. The sensor is configured to detect an analyte. The method may involve forming a first polymer layer. Further, the method may involve positioning the structure on the first polymer layer. Still further, the method may involve forming a second polymer layer over the first polymer layer and the structure, such that the structure is fully enclosed by the first polymer layer, the second polymer layer, and the one or more photoresist layers. The method may also involve removing the one or more photoresist layers to form a channel through the second polymer layer, wherein the sensor is configured to receive the analyte via the channel.
1. A method comprising:
forming one or more photoresist layers over a sensor located on a structure, such that the sensor is covered by the one or more photoresist layers, wherein the sensor is configured to detect an analyte;
forming a first polymer layer, wherein the first polymer layer defines a posterior side of an eye-mountable device;
positioning the structure on the first polymer layer;
forming a second polymer layer over the first polymer layer and the structure, such that the structure is fully enclosed by the first polymer layer, the second polymer layer, and the one or more photoresist layers, wherein the second polymer layer defines an anterior side of the eye-mountable device; and
removing the one or more photoresist layers to form a channel through the second polymer layer, wherein the sensor is configured to receive the analyte via the channel.
2. The method of claim 1 , wherein the forming one or more photoresist layers over a sensor located on a structure comprises forming a first photoresist layer over the sensor and forming a second photoresist layer over the first photoresist layer.
3. The method of claim 1 , wherein the forming one or more photoresist layers over a sensor located on a structure comprises photolithographically patterning at least one photoresist layer of the one or more photoresist layers.
4. The method of claim 1 , wherein at least one photoresist layer of the one or more photoresist layers is patterned positively.
5. The method of claim 1 , wherein at least one photoresist layer of the one or more photoresist layers is patterned negatively.
6. The method of claim 1 , wherein at least one photoresist layers of the one or more photoresist layers comprises a material selected from the group consisting of cyclopentanone, 2-ethoxyethyl acetate, and 1-methoxy-2-propanol acetate.
7. The method of claim 1 , wherein at least one photoresist layer of the one or more photoresist layers has a thickness between 120 to 200 micrometers.
8. The method of claim 1 , wherein at least one photoresist layer of the one or more photoresist layers has a thickness of up to 5 micrometers.
9. The method of claim 1 , wherein the second polymer layer is thicker than the first polymer layer.
10. The method of claim 1 , wherein the forming a second polymer layer over the first polymer layer and the structure comprises forming the second polymer layer in a mold comprising a molding piece.
11. The method of claim 10 , wherein at least one photoresist layer of the one or more photoresist layers contacts the molding piece during formation of the second polymer layer.
12. The method of claim 1 , wherein the removing the one or more photoresist layers to form a channel through the second polymer layer comprises dissolving the one or more photoresist layers in a fluid.
13. The method of claim 12 , wherein the fluid comprises n-methylpyrrolidinone.