Formation of metal structures in solar cells
View Patent ↗A metal contact of a solar cell is formed by electroplating copper using an electroplating seed that is formed on a dielectric layer. The electroplating seed includes an aluminum layer that connects to a diffusion region of the solar cell through a contact hole in the dielectric layer. A nickel layer is formed on the aluminum layer, with the nickel layer-aluminum layer stack forming the electroplating seed. The copper is electroplated in a copper plating bath that has methanesulfonic acid instead of sulfuric acid as the supporting electrolyte.
1. A method of fabricating a solar cell, the method comprising:
forming an aluminum layer on a dielectric layer to connect to a diffusion region of the solar cell through a contact hole in the dielectric layer;
forming an electroplating seed, wherein said forming the electroplating seed includes forming a nickel layer on the aluminum layer; and
forming a metal contact that connects to the diffusion region of the solar cell, wherein said forming the metal contact includes electroplating a copper layer on a backside of the solar cell, wherein the copper layer is electroplated in a copper plating bath comprising methanesulfonic acid with no sulfuric acid.
2. The method of claim 1 , wherein the nickel layer is plated on the aluminum layer.
3. The method of claim 1 , wherein said forming the aluminum layer includes forming the aluminum layer on the dielectric layer comprising silicon oxide.
4. The method of claim 1 , wherein said forming the aluminum layer includes printing the aluminum layer on the dielectric layer.
5. The method of claim 4 , wherein said printing the aluminum layer includes screen printing the aluminum layer on the dielectric layer.
6. The method of claim 1 , wherein said forming the aluminum layer on the dielectric layer includes forming the aluminum layer on the dielectric layer to connect to a diffusion region that is formed within a substrate of the solar cell.
7. The method of claim 1 , wherein said forming the aluminum layer on the dielectric layer includes forming the aluminum layer on the dielectric layer that is formed on a solar cell substrate comprising monocrystalline silicon.
8. A method of fabricating a solar cell, the method comprising:
forming a dielectric layer on a solar cell substrate;
forming a contact hole through the dielectric layer to expose a diffusion region of the solar cell;
forming an aluminum layer on the dielectric layer and into the contact hole to connect to the diffusion region; and
electroplating a copper layer using the aluminum layer as an electroplating seed in a copper electroplating bath comprising methanesulfonic acid.
9. The method of claim 8 wherein said electroplating the copper layer includes electroplating the copper layer in the electroplating bath that has no sulfuric acid.
10. The method of claim 8 further comprising:
forming a nickel layer on the aluminum layer, wherein the copper layer is electroplated on the nickel layer.
11. The method of claim 10 wherein said forming the nickel layer includes plating the nickel layer on the aluminum layer.
12. The method of claim 8 wherein said forming the aluminum layer includes printing the aluminum layer on the dielectric layer.
13. The method of claim 8 wherein said forming the aluminum layer includes screen printing the aluminum layer on the dielectric layer.
14. The method of claim 8 wherein said forming the aluminum layer includes forming the aluminum layer to connect to the diffusion region that is formed within the solar cell substrate.
15. The method of claim 8 wherein said forming the dielectric layer includes forming the dielectric layer on the solar cell substrate that comprises monocrystalline silicon.
16. A method of fabricating a solar cell, the method comprising:
forming an aluminum layer on a dielectric layer of the solar cell; and
electroplating a copper layer using the aluminum layer as an electroplating seed in a copper plating bath having a supporting electrolyte comprising methanesulfonic acid.
17. The method of claim 16 wherein said electroplating the copper layer includes electroplating the copper layer in the copper plating bath that has no sulfuric acid.
18. The method of claim 16 wherein said forming the aluminum layer includes printing the aluminum layer on the dielectric layer.
19. The method of claim 16 further comprising:
forming a nickel layer on the aluminum layer to form the electroplating seed.
20. The method of claim 16 wherein said electroplating the copper layer includes electroplating the copper layer to connect to a diffusion region of the solar cell.