Thin-film transistor and zinc oxide-based sputtering target for the same
View Patent ↗A thin-film transistor includes a metal electrode and a zinc oxide-based barrier film that blocks a material from diffusing out of the metal electrode. The zinc oxide-based barrier film is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based barrier film. A zinc oxide-based sputtering target for deposition of a barrier film of a thin-film transistor is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based sputtering target.
1. A thin-film transistor comprising: a metal electrode;
a zinc oxide-based barrier film comprising zinc oxide doped with indium oxide, and a content of the indium oxide ranges, by weight, from 1 to 50 percent of the zinc oxide-based barrier film; and
an oxide semiconductor layer,
wherein the zinc oxide-based barrier film is disposed between the metal electrode and the oxide semiconductor layer and the barrier film blocks a material from diffusing out of the metal electrode and into the oxide semiconductor layer.
2. The thin-film transistor of claim 1 , wherein the metal electrode comprises at least one of a source electrode and a drain electrode.
3. The thin-film transistor of claim 1 , wherein the metal electrode comprises copper.
4. The thin-film transistor of claim 1 , wherein the oxide semiconductor layer comprises indium-gallium-zinc oxide (IGZO).
5. The thin-film transistor of claim 1 , wherein the zinc oxide-based barrier film further comprises a dopant of at least one element selected from among group III elements and group IV elements.
6. The thin-film transistor of claim 1 , wherein a resistivity of the zinc oxide-based barrier film ranges from 100 to 10 −4 Ω·cm.
7. The thin-film transistor of claim 1 . wherein the zinc oxide-based barrier film has a crystal size ranging from 10 to 5000 Å in a full width at half maximum (FWHM) analysis of an X-ray diffraction (XRD) measurement.
8. The thin-film transistor of claim 1 , comprising a thin-film transistor for a liquid crystal display or an organic light-emitting device.
9. A zinc oxide-based sputtering target for deposition of a barrier film of a thin-film transistor, the zinc oxide-based sputtering target comprising zinc oxide doped with indium oxide, a content of the indium oxide ranging, by weight, from 1 to 50 percent of the zinc oxide-based sputtering target, wherein a resistivity of the zinc oxide-based sputtering target is 100 Ω·cm or less.
10. The zinc oxide-based sputtering target of claim 9 , further comprising at least one element selected from among group III elements and group IV elements.