Method for producing group-III nitride semiconductor crystal, group-III nitride semiconductor substrate, and semiconductor light emitting device
The method for producing a group III nitride semiconductor crystal comprises preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing includes growing the group III nitride semiconductor so as to extend in the +C-axis direction of the seed crystal. A group III-V nitride semiconductor crystal having high quality and a large-area non-polar plane can be obtained by the method.
1. A group III nitride semiconductor substrate, comprising:
a substrate body comprising a group III nitride semiconductor crystal and having a surface which is a non-polar plane,
wherein the non-polar plane has an area of at least 1 cm 2 , a dislocation line detected in observation from a side of the non-polar plane according to a cathodeluminescence method in a vicinity of the surface of the non-polar plane has a length of at most 10 μm, the non-polar plane is a {10-10} plane, and a crystal plane of the group III nitride semiconductor crystal has a radius of curvature of at least 15 m as measured through XRD.
2. The group III nitride semiconductor substrate according to claim 1 , wherein the area of the non-polar plane is at least 5 cm 2 .
3. The group III nitride semiconductor substrate according to claim 1 , wherein the group III nitride semiconductor crystal is Al 1-x Ga x N(0≦x≦1).
4. A semiconductor light-emitting device, comprising:
a group III nitride semiconductor substrate of claim 1 .
5. The semiconductor light-emitting device according to claim 4 , having an emission wavelength of at least 380 nm.
6. The group III nitride semiconductor substrate according to claim 1 , wherein the group III nitride semiconductor crystal is Al 1-x Ga x N where x is from 0.5 to 0.9.
7. The group III nitride semiconductor substrate according to claim 1 , wherein the group III nitride semiconductor crystal is GaN.
8. The group III nitride semiconductor substrate according to claim 7 , wherein a crystal plane of the group III nitride semiconductor crystal has a radius of curvature of from 15 m to 1000 m as measured through XRD.
9. The group III nitride semiconductor substrate according to claim 7 , wherein a crystal plane of the group III nitride semiconductor crystal has a radius of curvature of from 15 m to 100 m as measured through XRD.
10. A group III nitride semiconductor substrate, comprising:
a substrate body comprising a group III nitride semiconductor crystal and having a non-polar plane having an area of at least 1 cm 2 ,
wherein a crystal plane of the group III nitride semiconductor crystal has a radius of curvature of at least 15 m as measured through XRD.
11. The group III nitride semiconductor substrate according to claim 10 , wherein the area of the non-polar plane is at least 5 cm 2 .
12. The group III nitride semiconductor substrate according to claim 10 , wherein the non-polar plane is a {10-10} plane or a {11-20} plane.
13. The group III nitride semiconductor substrate according to claim 10 , wherein the group III nitride semiconductor crystal is Al 1-x Ga x N(0≦x≦1).
14. The group III nitride semiconductor substrate according to claim 10 , wherein the non-polar plane is a {10-10} plane.
15. The group III nitride semiconductor substrate according to claim 10 , wherein the non-polar plane is a {11-20} plane.
16. The group III nitride semiconductor substrate according to claim 10 , wherein the group III nitride semiconductor crystal is Al 1-x Ga x N where x is from 0.5 to 0.9.
17. The group III nitride semiconductor substrate according to claim 10 , wherein the group III nitride semiconductor crystal is GaN.
18. The group III nitride semiconductor substrate according to claim 17 , wherein a crystal plane of the group III nitride semiconductor crystal has a radius of curvature of from 15 m to 1000 m as measured through XRD.
19. The group III nitride semiconductor substrate according to claim 17 , wherein a crystal plane of the group III nitride semiconductor crystal has a radius of curvature of from 15 m to 100 m as measured through XRD.