Systems and methods for providing thermal barrier bilayers for heat assisted magnetic recording media
View Patent ↗Systems and methods for providing thermal barrier bilayers for heat assisted magnetic recording (HAMR) media are provided. One such HAMR medium includes a substrate, a heat sink layer on the substrate, a thermal barrier bilayer on the heat sink layer, the bilayer comprising a first thermal barrier layer on the heat sink layer and an amorphous underlayer on the first thermal barrier layer, and a magnetic recording layer on the amorphous underlayer, wherein a thermal conductivity of the first thermal barrier layer is less than a thermal conductivity of the amorphous underlayer.
1. A medium for heat assisted magnetic recording, the medium comprising:
a substrate;
a heat sink layer on the substrate;
a thermal barrier bilayer on the heat sink layer, the thermal barrier bilayer comprising:
a first thermal barrier layer on the heat sink layer, and
an amorphous underlayer on the first thermal barrier layer; and
a magnetic recording layer on the amorphous underlayer,
wherein a thermal conductivity of the first thermal barrier layer is less than a thermal conductivity of the amorphous underlayer.
2. The medium of claim 1 , wherein the thermal conductivity of the first thermal barrier layer is in a range of about 5 percent to about 25 percent of the thermal conductivity of the amorphous underlayer.
3. The medium of claim 1 , wherein the thermal conductivity of the first thermal barrier layer is about 10 percent of the thermal conductivity of the amorphous underlayer.
4. The medium of claim 1 , wherein the first thermal barrier layer is about transparent and comprises at least one material different from a material of the amorphous underlayer.
5. The medium of claim 1 , wherein the first thermal barrier layer comprises an amorphous material.
6. The medium of claim 5 , wherein the first thermal barrier layer comprises amorphous carbon.
7. The medium of claim 1 , wherein the thermal barrier bilayer is configured to:
facilitate a heat transfer from the magnetic recording layer to the heat sink layer; and
impede a heat transfer from the heat sink layer to the magnetic recording layer.
8. The medium of claim 1 , wherein the first thermal barrier layer is deposited using a deposition sub-process comprising application of a bias voltage to the substrate.
9. The medium of claim 8 , wherein the deposition sub-process is selected from the group consisting of a chemical vapor deposition sub-process and a sputter deposition sub-process.
10. The medium of claim 1 , wherein the amorphous underlayer comprises a material selected from the group consisting of CrTiX, CrTaX, NiTaX, CoCrTaZrX, CoFeZrBCrX, CoTaZrX, CoFeTaZrX, CoCrWTaZrX, CoCrMoTaZrX, CoZrWMoX, and combinations thereof, wherein X is selected from the group consisting of SiO2 and ZrO2.
11. The medium of claim 1 , further comprising:
an adhesion layer between the substrate and the heat sink layer;
a growth layer between the amorphous underlayer and the magnetic recording layer; and
an overcoat layer on the magnetic recording layer.
12. The medium of claim 11 :
wherein the substrate comprises a material selected from the group consisting of an Al alloy, NiP plated Al, glass, glass ceramic, and combinations thereof;
wherein the adhesion layer comprises a material selected from the group consisting of CrTi, CrTa, NiTa, CoCrTaZr, CoFeZrBCr, CoTaZr, CoFeTaZr, CoCrWTaZr, CoCrMoTaZr, CoZrWMo, and combinations thereof;
wherein the heat sink layer comprises a material selected from the group consisting of Ag, Al, Au, Cu, Cr, Mo, Ru, W, CuZr, MoCu, AgPd, CrRu, CrV, CrW, CrMo, CrNd, NiAl, NiTa, and combinations thereof;
wherein the first thermal barrier layer comprises a material selected from the group consisting of C, Al2O3, SiO2, WO3, Ta2O5, Nb2O5, ZrO2, SiN, and combinations thereof;
wherein the amorphous underlayer comprises a material selected from the group consisting of CrTiX, CrTaX, NiTaX, CoCrTaZrX, CoFeZrBCrX, CoTaZrX, CoFeTaZrX, CoCrWTaZrX, CoCrMoTaZrX, CoZrWMoX, and combinations thereof, wherein X is selected from the group consisting of SiO2 and ZrO2;
wherein the growth layer comprises a material selected from the group consisting of Cr, Mo, NiAl, MgO, TiC, TiN, Ag, CrMo, Pt, Pd, Ru, and combinations thereof;
wherein the magnetic recording layer comprises a material selected from the group consisting of FePt, CoPt, and combinations thereof; and
wherein the overcoat layer comprises C.
13. A heat assisted magnetic recording system comprising:
the medium of claim 1 ;
a light source configured to direct light energy on to the medium; and
a magnetic transducer configured to write information to the medium.
14. A method for fabricating a medium for heat assisted magnetic recording, the method comprising:
providing a substrate;
providing a heat sink layer on the substrate;
providing a thermal barrier bilayer on the heat sink layer comprising:
providing a first thermal barrier layer on the heat sink layer, and
providing an amorphous underlayer on the first thermal barrier layer; and
providing a magnetic recording layer on the amorphous underlayer,
wherein a thermal conductivity of the first thermal barrier layer is less than a thermal conductivity of the amorphous underlayer.
15. The method of claim 14 , wherein the thermal conductivity of the first thermal barrier layer is in a range of about 5 percent to about 25 percent of the thermal conductivity of the amorphous underlayer.
16. The method of claim 14 , wherein the thermal conductivity of the first thermal barrier layer is about 10 percent of the thermal conductivity of the amorphous underlayer.
17. The method of claim 14 , wherein the first thermal barrier layer is about transparent and comprises at least one material different from a material of the amorphous underlayer.
18. The method of claim 14 , wherein the first thermal barrier layer comprises an amorphous material.
19. The method of claim 18 , wherein the first thermal barrier layer comprises amorphous carbon.
20. The method of claim 14 , wherein the thermal barrier bilayer is configured to:
facilitate a heat transfer from the magnetic recording layer to the heat sink layer; and
impede a heat transfer from the heat sink layer to the magnetic recording layer.
21. The method of claim 14 , wherein providing the first thermal barrier layer on the heat sink layer comprises:
applying a bias voltage to the substrate; and
depositing the first thermal barrier layer on the heat sink layer using a deposition sub-process.
22. The method of claim 21 , wherein the deposition sub-process is selected from the group consisting of a chemical vapor deposition sub-process and a sputter deposition sub-process.
23. The method of claim 14 , wherein the amorphous underlayer comprises a material selected from the group consisting of CrTiX, CrTaX, NiTaX, CoCrTaZrX, CoFeZrBCrX, CoTaZrX, CoFeTaZrX, CoCrWTaZrX, CoCrMoTaZrX, CoZrWMoX, and combinations thereof, wherein X is selected from the group consisting of SiO2 and ZrO2.
24. The method of claim 14 , further comprising:
providing an adhesion layer between the substrate and the heat sink layer;
providing a growth layer between the amorphous underlayer and the magnetic recording layer; and
providing an overcoat layer on the magnetic recording layer.
25. The method of claim 24 :
wherein the substrate comprises a material selected from the group consisting of an Al alloy, NiP plated Al, glass, glass ceramic, and combinations thereof;
wherein the adhesion layer comprises a material selected from the group consisting of CrTi, CrTa, NiTa, CoCrTaZr, CoFeZrBCr, CoTaZr, CoFeTaZr, CoCrWTaZr, CoCrMoTaZr, CoZrWMo, and combinations thereof;
wherein the heat sink layer comprises a material selected from the group consisting of Ag, Al, Au, Cu, Cr, Mo, Ru, W, CuZr, MoCu, AgPd, CrRu, CrV, CrW, CrMo, CrNd, NiAl, NiTa, and combinations thereof;
wherein the first thermal barrier layer comprises a material selected from the group consisting of C, Al2O3, SiO2, WO3, Ta2O5, Nb2O5, ZrO2, SiN, and combinations thereof;
wherein the amorphous underlayer comprises a material selected from the group consisting of CrTiX, CrTaX, NiTaX, CoCrTaZrX, CoFeZrBCrX, CoTaZrX, CoFeTaZrX, CoCrWTaZrX, CoCrMoTaZrX, CoZrWMoX, and combinations thereof, wherein X is selected from the group consisting of SiO2 and ZrO2;
wherein the growth layer comprises a material selected from the group consisting of Cr, Mo, NiAl, MgO, TiC, TiN, Ag, CrMo, Pt, Pd, Ru, and combinations thereof;
wherein the magnetic recording layer comprises a material selected from the group consisting of FePt, CoPt, and combinations thereof; and
wherein the overcoat layer comprises C.