Semiconductor light-emitting devices
View Patent ↗A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned on the upper surface in a periodic manner, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The first conductive type semiconductor layer includes a plurality of protrusions each facing a portion of the substrate between the bumps, the protrusions are positioned in a ring manner at a peripheral region of the first conductive type semiconductor layer, and the protrusions are spaced apart from the bumps.
1. A semiconductor light-emitting device, comprising:
a sapphire substrate comprising a plurality of flat surfaces and a plurality of bumps protruding from the plurality of flat surfaces, wherein each bump of the plurality of bumps is separated from an adjacent bump by one of the flat surfaces;
a semiconductor layer having a first surface positioned on the sapphire substrate and a second surface opposite to the first surface, the first surface comprising:
a plurality of first protrusions, each of the first protrusions contacting each of the flat surfaces of the sapphire substrate respectively; and
a plurality of second protrusions protruding from the first surface of the semiconductor layer and extending toward the plurality of bumps of the sapphire substrate respectively, wherein each of the plurality of second protrusions is spaced apart from each of the bumps by an air gap; and
a light-emitting structure positioned on the second surface.
2. The semiconductor light-emitting device of claim 1 , wherein at least one of the plurality of first protrusions is spaced apart from at least one of the plurality of bumps.
3. The semiconductor light-emitting device of claim 2 , wherein at least one of the plurality of first protrusions is spaced apart from at least one of the plurality of bumps by an air gap.
4. The semiconductor light-emitting device of claim 1 , wherein at least one of the plurality of second protrusions is narrower or shorter than at least one of the plurality of first protrusions.
5. The semiconductor light-emitting device of claim 1 , wherein at least one of the plurality of first protrusions is disposed in a peripheral region of the semiconductor layer.
6. The semiconductor light-emitting device of claim 1 , wherein at least one of the plurality of bumps is not covered by the semiconductor layer.
7. The semiconductor light-emitting device of claim 1 , wherein the plurality of bumps is arranged in a periodic configuration.
8. The semiconductor light-emitting device of claim 1 , wherein the sapphire substrate has a circular region not covered by the semiconductor layer.
9. The semiconductor light-emitting device of claim 1 , wherein the plurality of bumps surrounds a peripheral region of the sapphire substrate, and the plurality of first protrusions and the plurality of second protrusions surround a peripheral region of the semiconductor layer.
10. The semiconductor light-emitting device of claim 1 , wherein the plurality of first protrusions and the plurality of second protrusions are formed at an edge of the semiconductor layer, but not in a center of the semiconductor layer.
11. A semiconductor light-emitting device, comprising:
a sapphire substrate comprising a plurality of flat surfaces and a plurality of bumps, wherein each bump of the plurality of bumps is separated from an adjacent bump by one of the flat surfaces;
a semiconductor layer having a first surface positioned on the sapphire substrate and a second surface opposite to the first surface, the first surface comprising:
a plurality of first protrusions, each of the first protrusions contacting each of the flat surfaces of the sapphire substrate respectively; and
a plurality of second protrusions protruding from the first surface of the semiconductor layer and extending toward the plurality of bumps of the sapphire substrate respectively, wherein multiple of the plurality of second protrusions are respectively spaced apart from multiple of the bumps by an air gap; and
a light-emitting structure positioned on the second surface.
12. A semiconductor light-emitting device, comprising:
a sapphire substrate comprising a plurality of flat surfaces and a plurality of bumps, wherein each bump of the plurality of bumps is separated from an adjacent bump by one of the flat surfaces;
a semiconductor layer having a first surface positioned on the sapphire substrate and a second surface opposite to the first surface, the first surface comprising:
a plurality of first protrusions, each of the first protrusions contacting each of the flat surfaces of the sapphire substrate respectively; and
a plurality of second protrusions protruding from the first surface of the semiconductor layer and extending toward the plurality of bumps of the sapphire substrate respectively, wherein one of the plurality of second protrusions is spaced apart from one of the bumps by an air gap; and
a light-emitting structure positioned on the second surface.