Semiconductor optical device
A semiconductor optical device includes a light receiving device; an optical waveguide having a mesa structure, the optical waveguide including first, second, third, and fourth waveguide portions; and a passivation layer provided on a side surface of the light receiving device. The mesa structure in the second waveguide portion has a width increasing along the waveguide axis, and the mesa structure in the third waveguide portion has a width decreasing along the waveguide axis. The second waveguide portion includes first and second regions, the first region being optically coupled to the first waveguide portion and the second region being optically coupled to the third waveguide portion. The passivation layer is provided on side surfaces of the mesa structure in the second region, the third waveguide portion, and the fourth waveguide portion. The mesa structures in the first waveguide portion and the first region have side surfaces without the passivation layer.
1. A semiconductor optical device, comprising:
a light receiving device;
an optical waveguide having a mesa structure, the optical waveguide including a first waveguide portion, a second waveguide portion, a third waveguide portion, and a fourth waveguide portion, which are arranged along a waveguide axis; and
a passivation layer provided on a side surface of the light receiving device,
wherein the second waveguide portion is optically coupled to the first and third waveguide portions, the mesa structure in the second waveguide portion having a width increasing along the waveguide axis,
the third waveguide portion is optically coupled to the second and fourth waveguide portions, the mesa structure in the third waveguide portion having a width decreasing along the waveguide axis,
the fourth waveguide portion is optically coupled to the third waveguide portion and the light receiving device,
the second waveguide portion includes a first region and a second region arranged along the waveguide axis, the first region being optically coupled to the first waveguide portion and the second region being optically coupled to the third waveguide portion,
the passivation layer is provided on side surfaces of the mesa structure in the second region, the third waveguide portion, and the fourth waveguide portion, and
the mesa structures in the first waveguide portion and the first region have side surfaces without the passivation layer.
2. The semiconductor optical device according to claim 1 , wherein, in the second waveguide portion, a ratio of a length of the first region to a length of the second waveguide portion is set in the range of 0.4 or more and 0.6 or less.
3. The semiconductor optical device according to claim 1 , wherein, in the second waveguide portion, a ratio of a width of the second waveguide portion at an interface between the second waveguide portion and the third waveguide portion to a length of the second waveguide portion is set to 0.148 or less.
4. The semiconductor optical device according to claim 1 , wherein the third waveguide portion is optically coupled to the second waveguide portion through a fifth waveguide portion interposed therebetween, the fifth waveguide portion including a mesa structure having a constant width along the waveguide axis.
5. The semiconductor optical device according to claim 1 , wherein the passivation layer is made of a semiconductor.
6. The semiconductor optical device according to claim 5 , wherein the passivation layer is made of non-doped InP.
7. The semiconductor optical device according to claim 1 , wherein the second waveguide portion has a step portion formed at a connecting portion between the first region and the second region, and
the step portion has a height equal to a thickness of the passivation layer.
8. The semiconductor optical device according to claim 1 , wherein the mesa structure in the first waveguide portion has a width equal to a width of the mesa structure in the fourth waveguide portion.
9. The semiconductor optical device according to claim 1 , wherein the mesa structure includes a first cladding layer, a second cladding layer, and a core layer sandwiched by the first and second cladding layers.
10. The semiconductor optical device according to claim 9 , wherein the first and second cladding layers are made of InP, and
the core layer is made of InGaAs.
11. The semiconductor optical device according to claim 1 , wherein the second waveguide portion has a length that is twice a length of the third waveguide portion.