Micro device with stabilization post
A method and structure for stabilizing an array of micro devices is disclosed. A stabilization layer includes an array of stabilization cavities and array of stabilization posts. Each stabilization cavity includes sidewalls surrounding a stabilization post. The array of micro devices is on the array of stabilization posts. Each micro device in the array of micro devices includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface.
1. A structure comprising:
a stabilization layer comprising an array of stabilization cavities and an array of stabilization posts, wherein each stabilization cavity includes a stabilization post and sidewalls that surround and are taller than a corresponding stabilization post; and
an array of micro devices on the array of stabilization posts;
wherein each micro device in the array of micro devices includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface.
2. The structure of claim 1 , further comprising a sacrificial layer between the stabilization layer and the array of micro devices, wherein the array of stabilization posts extend through a thickness of the sacrificial layer, and wherein the sacrificial layer spans along a side surface of each of the micro devices in the array of micro devices, the side surface running between a top surface and the bottom surface of each micro device in the array.
3. The structure of claim 2 , wherein the sacrificial layer comprises an oxide or nitride.
4. The structure of claim 2 , wherein the micro devices are micro LED devices.
5. The structure of claim 1 , further comprising an array of bottom conductive contacts on the bottom surfaces of the array of micro devices.
6. The structure of claim 1 , wherein the stabilization layer is formed of a thermoset material.
7. The structure of claim 6 , wherein the thermoset material comprises benzocyclobutene (BCB).
8. The structure of claim 1 , wherein the array of stabilization posts are separated by a pitch of 1 μm to 10 μm.
9. A structure comprising:
a stabilization layer comprising an array of stabilization cavities and an array of stabilization posts, wherein each stabilization cavity includes sidewalls that surround a corresponding stabilization post; and
an array of micro devices on the array of stabilization posts;
wherein each micro device in the array of micro devices includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface, and each micro device includes an active device layer that is partially contained within a corresponding stabilization cavity.
10. The structure of claim 9 , wherein the device layer includes a p-n diode.
11. The structure of claim 10 , wherein the device layer includes a transistor.
12. The structure of claim 9 , wherein the stabilization cavity sidewalls are taller than the stabilization posts.
13. The structure of claim 9 , further comprising a sacrificial layer between the stabilization layer and the array of micro devices, wherein the array of stabilization posts extend through a thickness of the sacrificial layer, and wherein the sacrificial layer spans along a side surface of each of the micro devices in the array of micro devices, the side surface running between a top surface and the bottom surface of each micro device in the array.
14. The structure of claim 13 , wherein the sacrificial layer comprises an oxide or nitride.
15. The structure of claim 9 , further comprising an array of bottom conductive contacts on the bottom surfaces of the array of micro devices.
16. The structure of claim 9 , wherein the stabilization layer is formed of a thermoset material.
17. The structure of claim 16 , wherein the thermoset material comprises benzocyclobutene (BCB).
18. The structure of claim 9 , wherein the array of stabilization posts are separated by a pitch of 1 μm to 10 μm.