Contacts for an n-type gallium and nitrogen substrate for optical devices
View Patent ↗A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface and a front side surface. The method includes subjecting the backside surface to a polishing process, causing a backside surface to be characterized by a surface roughness, subjecting the backside surface to an anisotropic etching process exposing various crystal planes to form a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface, treating the backside surface comprising the plurality of pyramid-like structures, to a plasma species, and subjecting the backside surface to a surface treatment. The method further includes forming a contact material comprising an aluminum bearing species or a titanium bearing species overlying the surface-treated backside to form a plurality of LED devices with the contact material.
1. A light emitting diode (LED) device, comprising:
a gallium and nitrogen containing substrate member comprising a backside surface and a front side surface, the front side surface comprising an n-type material overlying the substrate member, an active region overlying the n-type material, and a p-type material overlying the active region; and
a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface; and
a contact material comprising an aluminum bearing species or a titanium bearing species overlying the plurality of pyramid-like structures,
wherein the plurality of pyramid like structures comprises a surface treated with a plasma species followed by treatment with an acid.
2. The device of claim 1 , wherein the backside surface is characterized by a nitrogen face of a c-plane and an n-type GaN with a carrier concentration from 1E15/cm 3 to 1 E20/cm 3 .
3. The device of claim 1 , wherein each of the plurality of pyramid-like structures is characterized by a height from 20 nm to 1000 nm.
4. The device of claim 1 , wherein the active region is configured to emit electromagnetic radiation in a range of 450 nm to 480 nm.
5. The device of claim 1 , wherein the active region comprises a plurality of quantum well structures.
6. The device of claim 1 , wherein each of the plurality of pyramid-like structures comprises three sides.
7. The device of claim 1 , wherein each of the plurality of pyramid-like structures comprises two or more sides.
8. The device of claim 1 , wherein the plasma species is a SiCl 4 plasma.
9. The device of claim 1 , wherein the acid is hydrochloric acid.