IP Library Granted Patent US 9,286,948
Granted Patent B2
US 9,286,948 · App. 13/941,791 · Granted Mar 15, 2016

Query operations for stacked-die memory device

Inventors: Gabriel H. Loh (Bellevue, WA); Nuwan S. Jayasena (Sunnyvale, CA); James M. O'Connor (Austin, TX); Yasuko Eckert (Kirkland, WA)
Assignee: Advanced Micro Devices, Inc.
G11C5/02G06F12/02G11C5/025G06F12/10
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Quick Facts
Patent No.
US 9,286,948
App. No.
13/941,791
Granted
Mar 15, 2016
Kind
B2
Abstract

An integrated circuit (IC) package includes a stacked-die memory device. The stacked-die memory device includes a set of one or more stacked memory dies implementing memory cell circuitry. The stacked-die memory device further includes a set of one or more logic dies electrically coupled to the memory cell circuitry. The set of one or more logic dies includes a query controller and a memory controller. The memory controller is coupleable to at least one device external to the stacked-die memory device. The query controller is to perform a query operation on data stored in the memory cell circuitry responsive to a query command received from the external device.

Claims (74)

1. An integrated circuit (IC) package comprising:

a stacked-die memory device comprising:

a set of one or more stacked memory dies implementing random access memory cell circuitry; and

a set of one or more logic dies electrically coupled to the random access memory cell circuitry, the set of one or more logic dies comprising a query controller and a memory controller, wherein the memory controller is coupleable to at least one device external to the stacked-die memory device, and wherein the query controller is to perform a query operation on data stored in the random access memory cell circuitry responsive to a query command received from the external device, the query operation comprising a search of memory locations of the random access memory cell circuitry for information sought by the query command.

2. The IC package of claim 1 , wherein:

the set of one or more stacked memory dies comprises a memory die having a random access memory bank, a bank row buffer, and row buffer search logic to search the bank row buffer based on a search criterion provided by the query controller.

3. The IC package of claim 1 , wherein:

the random access memory cell circuitry implements a key-value store;

the query command comprises a key search command; and

the query operation comprises searching the key-value store for a key specified by the key search command and outputting a data object stored in the key-value store in association with the key.

4. The IC package of claim 3 , wherein:

the key-value store implements a cache;

the key search command comprises a cache access command;

the key comprises a tag value associated with the cache access command; and

the data object comprises a cache line of the cache.

5. The IC package of claim 1 , wherein:

the random access memory cell circuitry implements a key-value store;

the query command comprises a data search command; and

the query operation comprises searching the key-value store for a data object specified by the data search command and outputting a key stored in the key-value store in association with the data object.

6. The IC package of claim 1 , wherein:

the random access memory cell circuitry implements a single-instance store;

the query command comprises an insert command to insert a data object into the single-instance store; and

the query operation comprises searching the single-instance store and, in response to identifying an instance of the data object already stored in the single-instance store, outputting to the external device a key stored in the single-instance store in association with the instance of the data object.

7. The IC package of claim 6 , wherein the query operation further comprises inserting the data object into the single-instance store, storing a new key in the single-instance store in association with the data object, and outputting to the external device the new key in response to identifying that the single-instance store does not already store an instance of the data object.

8. The IC package of claim 1 , wherein the query controller comprises:

hash logic to generate an index value based on a search value associated with the query command;

search access logic to access a data object stored at a location in the random access memory cell circuitry based on the index value; and

compare logic to identify a match between the accessed data object and the search value based on a search criterion associated with the query command.

9. The IC package of claim 8 , wherein the search criterion includes a wildcard.

10. The IC package of claim 1 , wherein the set of one or more stacked memory dies and the set of one or more logic dies are disposed in a stacked configuration whereby the memory controller is connected to the set of one or more stacked memory dies via a set of through silicon vias.

11. The IC package of claim 1 , wherein the set of one or more stacked memory dies and the set of one or more logic dies are disposed in a side-split arrangement whereby the memory controller is connected to the stacked memory dies via an interposer.

12. The IC package of claim 1 , further comprising:

the external device.

13. The IC package of claim 1 , wherein the query controller is implemented as programmable logic.

14. A method comprising:

providing a stacked-die memory device including a set of one or more stacked memory dies implementing random access memory cell circuitry, and a set of one or more logic dies electrically coupled to the random access memory cell circuitry, the set of one or more logic dies having a query controller and a memory controller; and

performing, via the query controller, a query operation on data stored in the random access memory cell circuitry in response to a query command received from a device external to the stacked-die memory device via the memory controller, the query operation comprising a search of memory locations of the random access memory cell circuitry for information sought by the query command.

15. The method of claim 14 , wherein:

the random access memory cell circuitry implements a key-value store;

the query command comprises a key search command; and

performing the query operation comprises:

searching the key-value store for a key specified by the key search command; and

in response to locating the key in the key-value store, outputting a data object stored in the key-value store in association with the key.

16. The method of claim 15 , wherein:

the key-value store implements a cache;

the key search command comprises a cache access command;

the key comprises a tag value associated with the cache access command; and

the data object comprises a cache line of the cache.

17. The method of claim 14 , wherein:

the random access memory cell circuitry implements a key-value store;

the query command comprises a data search command; and

performing the query operation comprises:

searching, via the query controller, the key-value store for a data object specified by the data search command; and

in response to locating the data object in the key-value store, outputting to the device a key stored in the key-value store in association with the data object.

18. The method of claim 14 , wherein:

the random access memory cell circuitry implements a single-instance store;

the query command comprises an insert command to insert a data object into the single-instance store; and

performing the query operation comprises:

searching, via the query controller, the single-instance store for the data object; and

in response to identifying an instance of the data object already stored in the single-instance store, outputting to the external device a key stored in the single-instance store in association with the instance of the data object.

19. The method of claim 18 , wherein performing the query operation further comprises:

in response to identifying that the single-instance store does not already store an instance of the data object:

inserting an instance of the data object into the single-instance store;

storing a new key in the single-instance store in association with the instance of the data object; and

outputting the new key to the external device.

20. The method of claim 14 , wherein:

the random access memory cell circuitry implements a key-value store; and

performing the query operation comprising rebalancing the key-value store.

21. The method of claim 14 , wherein providing the stacked-die memory device comprises:

providing the set of one or more stacked memory dies and the set of one or more logic dies as part of the same integrated circuit (IC) package.

22. A stacked-die memory device comprising:

a set of one or more stacked memory dies implementing random access memory cell circuitry, the random access memory cell circuitry implementing a key-value store as a cache, the key-value store comprising a plurality of key-value locations, each key value location having a key field to serve as a cache tag field and a data object field to serve as a cache line field; and

a set of one or more logic dies electrically coupled to the memory cell circuitry, the set of one or more logic dies comprising a memory controller and cache access logic, wherein the memory controller is coupleable to at least one device external to the stacked-die memory device, and wherein in response to a cache access command from the external device identifying an address value, the cache access logic is to determine whether there is a cache hit by searching the key fields for a tag that matches the address value.

23. The stacked-die memory device of claim 22 , wherein, in response to determining a cache hit, the cache access logic is to output cache line data stored at the data object field associated with a key field identified as storing a tag matching the address value.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 15, 2013
From: LOH, GABRIEL H.; JAYASENA, NUWAN S.; O'CONNOR, JAMES M.; ECKERT, YASUKO
To: ADVANCED MICRO DEVICES, INC.
Reel/Frame 030796/0819 →
Continuity (1)
Related Publication 20150016172A1 · Jan 15, 2015