Large area deposition and doping of graphene, and products including the same
View Patent ↗Certain example embodiments of this invention relate to the use of graphene as a transparent conductive coating (TCC). In certain example embodiments, graphene thin films grown on large areas hetero-epitaxially, e.g., on a catalyst thin film, from a hydrocarbon gas (such as, for example, C 2 H 2 , CH 4 , or the like). The graphene thin films of certain example embodiments may be doped or undoped. In certain example embodiments, graphene thin films, once formed, may be lifted off of their carrier substrates and transferred to receiving substrates, e.g., for inclusion in an intermediate or final product. Graphene grown, lifted, and transferred in this way may exhibit low sheet resistances (e.g., less than 150 ohms/square and lower when doped) and high transmission values (e.g., at least in the visible and infrared spectra).
1. A doped graphene thin film structure including a graphene thin film and a metal catalyst thin film, the doped graphene thin film structure comprising:
the doped graphene thin film directly or indirectly on the metal catalyst thin film having a substantially single-orientation large-grain crystal structure,
wherein the graphene thin film is 1-10 atomic layers thick, and
wherein the doped graphene thin film has a sheet resistance less than 150 ohms/square.
2. The doped graphene thin film structure of claim 1 , wherein the doped graphene thin film includes n-type dopants.
3. The doped graphene thin film structure of claim 1 , wherein the doped graphene thin film includes p-type dopants.
4. The doped graphene thin film structure of claim 1 , wherein the doped graphene thin film is doped with any one or more of: nitrogen, boron, phosphorous, fluorine, lithium, potassium, and sulfur.
5. The doped graphene thin film structure of claim 1 , wherein the doped graphene thin film has a sheet resistance of 10-20 ohms/square.