Producing method of semiconductor device

1. A method for producing a semiconductor device comprising:

a preparing step of preparing a board formed with a concave portion, a terminal disposed in or around the concave portion, and a semiconductor element disposed in the concave portion;

a wire-bonding step of connecting the terminal to the semiconductor element with a wire;

a pressure-welding step of pressure-welding an encapsulating sheet to the board so as to be in close contact with the upper surface of a portion around the concave portion and to be separated from the upper surface of the concave portion under a reduced pressure atmosphere; and

an atmosphere releasing step of releasing the board and the encapsulating sheet under an atmospheric pressure atmosphere.

2. The method for producing a semiconductor device according to claim 1 , wherein

after the atmosphere releasing step, a two-step heating step in which heating is performed at a first temperature and thereafter, heating is performed at a second temperature that is higher than the first temperature is further included.

3. The method for producing a semiconductor device according to claim 2 , wherein

the first temperature has a heating temperature range in which the temperature increases to the second temperature.

4. The method for producing a semiconductor device according to claim 2 , wherein

in the two-step heating step, the encapsulating sheet is mechanically pressurized when heated at the first temperature.

5. The method for producing a semiconductor device according to claim 2 , wherein

the encapsulating sheet is prepared from an encapsulating resin composition containing a two-step thermosetting resin, and

in the two-step heating step, the encapsulating sheet is in a B-stage state when heated at the first temperature and the encapsulating sheet is in a C-stage state when heated at the second temperature.

6. The method for producing a semiconductor device according to claim 1 , wherein

after the atmosphere releasing step, a heating and fluid-pressurizing step in which the encapsulating sheet is heated and fluid-pressurized is further included.

7. The method for producing a semiconductor device according to claim 1 , wherein

in the pressure-welding step, the encapsulating sheet has a compressive elastic modulus of 0.16 MPa or less.

8. The method for producing a semiconductor device according to claim 1 , wherein

the length between the upper surface of the concave portion and the upper surface of the portion around the concave portion is 500 μm or less.