Laser power and energy sensor utilizing anisotropic thermoelectric material
View Patent ↗A laser-radiation sensor includes a copper substrate on which is grown an oriented polycrystalline buffer layer surmounted by an oriented polycrystalline sensor-element of an anisotropic transverse thermoelectric material. An absorber layer, thermally connected to the sensor-element, is heated by laser-radiation to be measured and communicates the heat to the sensor-element, causing a thermal gradient across the sensor-element. Spaced-apart electrodes in electrical contact with the sensor-element sense a voltage corresponding to the thermal gradient as a measure of the incident laser-radiation power. At least two protection layers are positioned between the sensor layer and the absorber layer.
1. A laser-radiation sensor, comprising:
a copper substrate;
an oriented polycrystalline buffer-layer deposited on a surface of the substrate, the buffer-layer having a crystal-orientation at a first angle between about 10 degrees and about 45 degrees relative to a normal to the surface of the substrate;
an oriented polycrystalline sensor-element of a thermoelectric material selected from the group of thermoelectric materials consisting of dysprosium barium cuprate, strontium sodium cobaltate, and strontium cobaltate deposited on the buffer layer, the sensor-element having a crystalline c-axis orientation at a second angle between about 10 degrees and about 45 degrees relative to the normal to the surface of the substrate;
two or more protection layers deposited on the sensor-element;
a radiation-absorber layer deposited on the uppermost protection layer; and
first and second elongated electrodes spaced apart in electrical contact with the sensor-element.
2. The laser-radiation sensor of claim 1 , wherein the sensor-element is a continuous layer of the oriented polycrystalline sensor-material extending between the first and second electrodes.
3. The laser-radiation sensor of claim 1 , wherein the sensor-element includes a plurality of strips of the oriented polycrystalline sensor-material spaced apart, parallel to each other, and extending between the first and second electrodes.
4. The laser-radiation sensor of claim 3 , wherein the strips of the sensor-element are aligned parallel to the crystalline c-axis of the oriented polycrystalline sensor-material.
5. The laser-radiation sensor of claim 1 , wherein there is a first protection layer deposited on the sensor element, a second protection layer deposited on the first protection layer, and a third protection layer deposited on the second protection layer.
6. The laser-radiation sensor of claim 5 , wherein first protection layer is a layer of one of magnesium oxide and silicon dioxide, the second protection layer is a layer of polysilazane, and the third layer is a layer of silicon dioxide.
7. The laser-radiation sensor of claim 6 , wherein the radiation-absorber layer is a layer of a radiation-absorbing material selected from a group of radiation-absorbing materials consisting of boron carbide, titanium nitride, chromium oxide, gold black, and diamond like carbon (DLC).
8. The laser-radiation sensor of claim 1 , wherein the electrodes include a metal selected from a group of metals consisting of gold, platinum, silver, and palladium.
9. The laser-radiation sensor of claim 1 , wherein the buffer layer is a layer of material selected from a group of materials consisting of magnesium oxide, yttrium stabilized zirconia, and cerium oxide.
10. The laser-radiation sensor of claim 1 , wherein the first and second angles are about the same.
11. The laser-radiation sensor of claim 1 , wherein there is a first protection layer formed from an oxide material deposited on the sensor element and wherein there is a second protection layer deposited on the first protection layer wherein the second protection layer is applied in liquid or gel form in order to fill in pores formed in the oxide layer.
12. A laser-radiation sensor, comprising:
a substrate of a highly thermally conductive material;
an oriented polycrystalline buffer-layer deposited on a surface of the substrate, the buffer-layer having a crystal-orientation at a first angle between about 10 degrees and about 45 degrees relative to a normal to the surface of the substrate;
an oriented polycrystalline sensor-element of a thermoelectric material selected from the group of thermoelectric materials consisting of dysprosium barium cuprate, strontium sodium cobaltate, and strontium cobaltate deposited on the buffer layer, the sensor-element having a crystalline c-axis orientation at a second angle between about 10 degrees and about 45 degrees relative to the normal to the surface of the substrate;
two or more protection layers deposited on the sensor-element;
a radiation-absorber layer deposited on the uppermost protection layer;
first and second elongated electrodes spaced apart in electrical contact with the sensor-element; and
wherein the sensor-element includes a plurality of strips of the oriented polycrystalline sensor-material spaced apart, parallel to each other, and extending between the first and second electrodes, with each of the strips in electrical contact with the first and second electrodes.
13. The laser-radiation sensor of claim 12 , wherein the substrate is a copper substrate.
14. The laser-radiation sensor of claim 12 , wherein the buffer layer has a thickness between about 0.5 micrometers and about 4.0 micrometers, and is a layer of material selected from a group of materials consisting of magnesium oxide, yttrium stabilized zirconia, and cerium oxide.
15. The laser-radiation sensor of claim 12 , wherein the strips of sensor material have a thickness between about 300 nanometers and about 2000 nanometers.
16. The laser-radiation sensor of claim 12 , wherein there is a first protection layer deposited on the sensor element, a second protection layer deposited on the first protection layer, and a third protection layer deposited on the second protection layer.
17. The laser-radiation sensor of claim 16 , wherein first protection layer is a layer of one of magnesium oxide and silicon dioxide, the second protection layer is a layer of polysilazane, and the third layer is a layer of silicon dioxide.
18. The laser-radiation sensor of claim 12 , wherein the absorber layer has a thickness of between about 0.5 micrometers and about 5.0 micrometers, and is a layer of a radiation-absorbing material selected from a group of radiation-absorbing materials consisting of boron carbide, titanium nitride, chromium oxide, gold black, and diamond like carbon (DLC).
19. The laser-radiation sensor of claim 11 , wherein there is a first protection layer formed from an oxide material deposited on the sensor element and wherein there is a second protection layer deposited on the first protection layer wherein the second protection layer is applied in liquid or gel form in order to fill in pores formed in the oxide layer.