Semiconductor device with an array of lamellas and a micro-electro-mechanical resonator
A semiconductor device includes a silicon substrate layer with a decoupling region. The decoupling region of the silicon substrate layer comprises an array of lamellas laterally spaced apart from each other by cavities. Each lamella of the array of lamellas comprises at least 20% silicon dioxide.
1. A micro-electro-mechanical resonator comprising:
a resonator structure, wherein the resonator structure comprises at least one resonator area and at least one anchor area, wherein the resonator area is arranged next to an electrode for stimulating an oscillation of the resonator structure,
wherein an array of lamellas with at least one row of lamellas connects the anchor area laterally to a silicon substrate layer surrounding the resonator structure,
wherein the resonator structure and the array of lamellas are arranged above a common lateral cavity so that the resonator structure is connected to neighboring silicon solely through the array of lamellas connected to the anchor region.
2. The micro-electro-mechanical resonator according to claim 1 , wherein each lamella of the array of lamellas comprises at least 80% silicon dioxide.
3. The micro-electro-mechanical resonator according to claim 1 , wherein a lamella of the array of lamellas comprises a lateral length between 200 nm and 10 μm, a lateral thickness between 20 nm and 500 nm and a vertical depth between 500 nm and 100 μm.
4. The micro-electro-mechanical resonator according to claim 1 , wherein a cavity laterally separating two neighboring lamellas comprises a lateral width between 50 nm and 1 μm.
5. The micro-electro-mechanical resonator according to claim 1 , wherein the array of lamellas comprises rows of lamellas, wherein two neighboring rows of lamellas comprise a lateral offset.
6. The micro-electro-mechanical resonator according to claim 1 , wherein the cavities laterally separating the lamellas of the array of lamellas are sealed by a silicon oxide layer or a carbon layer at an end opposite to a bulk silicon of the semiconductor device.
7. The micro-electro-mechanical resonator according to claim 1 , wherein cavities laterally separating the lamellas of the array of lamellas are connected to the common lateral cavity at an end facing a bulk silicon of the semiconductor device.
8. The micro-electro-mechanical resonator according to claim 1 , wherein the array of lamellas connected to the anchor region comprises a p-n junction within the lamellas between the anchor region and the silicon substrate layer.