Light-emitting device and manufacturing method thereof
View Patent ↗A light emitting device and a method of fabricating thereof are provided. The method of fabricating the light emitting device comprises: providing a substrate having a first major surface and a second major surface; forming a plurality of light-emitting stacks on the first major surface; forming an etching protection layer on each of the light emitting stacks; forming a plurality of holes by a discontinuous laser beam on the substrate; etching the plurality of holes; and slicing off the substrate along the plurality of holes to form a light emitting device. The light emitting device has a substrate wherein the sidewall of the substrate comprising a first area with a substantially flat surface and a second area with substantially textured surface.
1. A method of fabricating a light-emitting device comprising:
providing a substrate;
forming a plurality of light-emitting stack layers on the substrate;
forming discontinuous holes directly on the substrate;
etching the discontinuous holes; and
cleaving the substrate along the discontinuous holes,
wherein one of the plurality of light-emitting stack layers is substantially surrounded by the discontinuous holes from a top view.
2. The method of claim 1 , further comprising a step of forming an etching protection layer on the plurality of light-emitting stack layers, wherein the etching protection layer comprises a material of SiO 2 or SiNx.
3. The method of claim 2 , further comprising a step of removing the etching protection layer.
4. The method of claim 1 , wherein the step of etching the discontinuous holes is performed with an etching solution in a temperature ranging between 100 and 300° C.
5. The method of claim 4 , wherein the etching solution comprises H 3 PO 4 or a mixture of H 3 PO 4 and H 2 SO 4 .
6. The method of claim 1 , wherein the step of forming the discontinuous holes is conducted by using a laser.
7. The method of claim 6 , wherein the laser is configured to generate a laser beam in a regular or an irregular pulse.
8. The method of claim 1 , further comprising a step of forming a plurality of semiconductor layers on the substrate; and a step of forming a mesa structure by removing a portion of the plurality of light-emitting stack layers.
9. The method of claim 8 , wherein the mesa structure is substantially surrounded by the discontinuous holes.
10. The method of claim 1 , further comprising a step of applying a grinding process to the substrate.
11. The method of claim 10 , wherein the grinding process is applied to the substrate on a surface opposite to the plurality of light-emitting stack layers.
12. The method of claim 1 , wherein the discontinuous holes and the plurality of light-emitting stack layers are arranged on the same side of the substrate.
13. The method of claim 1 , wherein the discontinuous holes and the plurality of light-emitting stack layers are arranged on different surfaces of the substrate.
14. The method of claim 1 , wherein the discontinuous holes are arranged not to pass through the substrate.
15. The method of claim 1 , wherein the discontinuous holes are opened on the substrate in a position near the plurality of light-emitting stack layers.
16. The method of claim 1 , wherein the substrate comprises a convex-concave structure far from the plurality of light-emitting stack layers.
17. The method of claim 1 , wherein the substrate has a side wall comprising a convex-concave structure sandwiched by flat areas.
18. The method of claim 1 , wherein the substrate comprises a concave structure having different widths.
19. The method of claim 1 , wherein the substrate comprises a concave structure and a convex structure having a width different from that of the concave structure.