Method and system for providing a laser submount for an energy assisted magnetic recording head
View Patent ↗A method and system for providing a laser diode submount for use in an energy assisted magnetic recording disk drive are described. A portion of a silicon substrate is removed, forming trenches therein. Each trench has sidewalls, surrounds a silicon island corresponding to a laser diode submount, and corresponds to a thickness of the laser diode submount. The silicon island has a top surface and a facets corresponding to the trench sidewalls. Insulator(s) for the top surface and facets of the silicon island are provided. Metallization is provided on the top surface and facets of the silicon island. A first portion of the metallization on the top surface corresponds to under bump metal (UBM) for solder pad(s). A second portion of the metallization corresponds to electrical traces. Solder pad(s) are provided on the UBM. The silicon island is released from the silicon substrate.
1. A laser diode submount comprising:
a silicon substrate having a thickness of not more than three hundred microns, the silicon substrate having a top face, a plurality of facets, and a back face, the top face and the plurality of facets forming a plurality of top angles of at least 89.5 degrees and not more than 90.5 degrees, the plurality of facets forming side faces of the silicon substrate and residing between the top face and the back face;
an insulating layer on the top face and plurality of facets;
at least one under bump metal (UBM) on the top face;
a plurality of electrical traces on a portion of at least the top face and the plurality of facets;
at least one solder pad on the at least one UBM.
2. The laser diode submount of claim 1 wherein a portion of the at least one UBM is on at least one of the plurality of facets.
3. An energy assisted magnetic recording disk drive comprising:
a media;
a slider including a write transducer;
a laser diode; and
a laser diode submount, the laser diode surmount including a semiconductor substrate, an insulating, at least one under bump metal (UBM), a plurality of electrical traces and at least one solder pad on the at least one UBM, the semiconductor substrate having a thickness of not more than three hundred microns, the semiconductor substrate having a top face, a plurality of facets, and a back face, the top face and the plurality of facets forming a plurality of top angles of at least 89.5 degrees and not more than 90.5 degrees, the plurality of facets forming side faces of the semiconductor substrate and residing between the top face and the back face, the insulating layer being on the top face and plurality of facets, the UBM being on the top face, the plurality of electrical traces on a portion of at least the top face and the plurality of facets, the laser diode being affixed to the top face of the laser diode submount.