CRYSTAL AND SUBSTRATE OF CONDUCTIVE GaAs, AND METHOD FOR FORMING THE SAME
An electrically conductive GaAs crystal has an atomic concentration of Si more than 1×10 17 cm −3 , wherein density of precipitates having sizes of at least 30 nm contained in the crystal is at most 400 cm −2 . In this case, it is preferable that the conductive GaAs crystal has a dislocation density of at most 2×10 −2 cm 2 or at least 1×10 −3 cm 2 .
1 - 6 . (canceled)
7 . A conductive GaAs bulk crystal having an atomic concentration of Si more than 1×10 17 cm −3 , wherein a density of precipitates having sizes of at least 30 nm contained in the crystal is at most 400 cm −2 .
8 . The conductive GaAs bulk crystal according to claim 7 having a dislocation density of at most 5×10 2 cm −2 .
9 . The conductive GaAs bulk crystal according to claim 7 having a dislocation density of at least 1×10 3 cm −2 .
10 . The conductive GaAs bulk crystal according to claim 7 , which have been grown and then annealed at a temperature of at least 1130° C. for at least 10 hours in a crystal growth furnace.
11 . A conductive GaAs crystal substrate cut from the conductive GaAs bulk crystal of claim 7 and having a polished mirror surface.
12 . The conductive GaAs crystal substrate according to claim 11 , wherein in said mirror surface a density of microscopic defects having sizes of at least 0.265 μm measured by a surface particle inspection device is at most 0.5/cm 2 .
13 . A method for producing the conductive GaAs bulk crystal of claim 7 , wherein said conductive GaAs bulk crystal is grown and thereafter annealed at a temperature of at least 1130° C. for at least 10 hours.