Polycrystalline diamond compact
View Patent ↗In an embodiment, a polycrystalline diamond compact includes a substrate and a preformed polycrystalline diamond table having an upper surface, an interfacial surface, and at least one side surface extending therebetween. The interfacial surface of the polycrystalline diamond table is bonded to the substrate. The polycrystalline diamond table includes bonded diamond grains defining interstitial regions. The polycrystalline diamond table includes a first region extending inwardly from at least a portion of the upper surface and at least a portion of the at least one side surface. The first region spaced from the interfacial surface. The polycrystalline diamond table includes at least a second region extending inwardly from the interfacial surface to the upper surface. The first region includes at least a first infiltrant disposed interstitially between the bonded diamond grains thereof. The second region includes at least a second infiltrant disposed interstitially between the bonded diamond grains thereof.
1. A polycrystalline diamond compact, comprising:
a substrate; and
a preformed polycrystalline diamond table including an outermost upper surface, an interfacial surface, and at least one side surface extending therebetween, the interfacial surface of the preformed polycrystalline diamond table bonded to the substrate, the preformed polycrystalline diamond table additionally including bonded diamond grains defining interstitial regions, the bonded diamond grains exhibiting an average grain size of about 20 μm or less, the preformed polycrystalline diamond table further including:
a first region extending inwardly from at least a portion of the outermost upper surface and at least a portion of the at least one side surface, the first region spaced from the interfacial surface, the first region including substantially only a first infiltrant disposed interstitially between the bonded diamond grains thereof; and
at least a second region extending inwardly from the interfacial surface to the upper surface, the at least a second region including at least a second infiltrant disposed interstitially between the bonded diamond grains thereof, the at least a second infiltrant having a different composition than that of the first infiltrant.
2. The polycrystalline diamond compact of claim 1 wherein the first infiltrant includes silicon.
3. The polycrystalline diamond compact of claim 2 wherein at least a portion of the silicon is included in silicon carbide disposed interstitially between the bonded diamond grains of the first region.
4. The polycrystalline diamond compact of claim 1 wherein the at least a second infiltrant includes a metallic infiltrant.
5. The polycrystalline diamond compact of claim 4 wherein the metallic infiltrant is provided from the substrate.
6. The polycrystalline diamond compact of claim 4 wherein the metallic infiltrant includes cobalt, iron, nickel, or alloys thereof.
7. The polycrystalline diamond compact of claim 4 wherein the metallic infiltrant is provided from the substrate, and includes cobalt, iron, nickel, or alloys thereof.
8. The polycrystalline diamond compact of claim 1 wherein the first region is configured as an annular region that extends peripherally about a portion of the at least a second region.
9. The polycrystalline diamond compact of claim 1 wherein the first region is configured as a peripheral region of the preformed polycrystalline diamond table.
10. The polycrystalline diamond compact of claim 1 wherein the at least a second region includes a portion that is generally centrally located relative to the first region.
11. The polycrystalline diamond compact of claim 1 wherein the first region extends along only a selected portion of the upper surface of the preformed polycrystalline diamond table.
12. The polycrystalline diamond compact of claim 1 wherein the first region of the polycrystalline diamond table is substantially free of tungsten carbide.
13. The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table includes tungsten carbide.
14. A rotary drill bit including a bit body adapted to engage a subterranean formation during drilling and at least one superabrasive cutting element affixed to the bit body, wherein the at least one superabrasive cutting element includes the polycrystalline diamond compact according to claim 1 .
15. A polycrystalline diamond compact, comprising:
a cemented carbide substrate including a metallic infiltrant; and
a preformed polycrystalline diamond table including an upper surface, an interfacial surface, and at least one side surface extending therebetween, the interfacial surface of the preformed polycrystalline diamond table bonded to the cemented carbide substrate, the preformed polycrystalline diamond table additionally including bonded diamond grains defining interstitial regions, the preformed polycrystalline diamond table further including:
a first region extending inwardly from at least a portion of the upper surface and at least a portion of the at least one side surface, the first region spaced from the interfacial surface, the first region including at least a first infiltrant disposed interstitially between the bonded diamond grains thereof;
at least a second region extending inwardly from the interfacial surface, the at least a second region including a portion of the metallic infiltrant disposed interstitially between the bonded diamond grains thereof; and
wherein the first region is configured as a region that extends peripherally about a portion of the at least a second region.
16. The polycrystalline diamond compact of claim 15 wherein the at least a first infiltrant includes silicon.
17. The polycrystalline diamond compact of claim 16 wherein at least a portion of the silicon is included in silicon carbide disposed interstitially between the bonded diamond grains of the first region.
18. The polycrystalline diamond compact of claim 16 wherein the metallic infiltrant includes cobalt, iron, nickel, or alloys thereof.
19. A polycrystalline diamond compact, comprising:
a cobalt-cemented tungsten carbide substrate; and
a preformed polycrystalline diamond table including an outermost upper surface, an interfacial surface, and at least one side surface extending therebetween, the interfacial surface of the preformed polycrystalline diamond table bonded to the cobalt-cemented tungsten carbide substrate, the preformed polycrystalline diamond table additionally including bonded diamond grains defining interstitial regions, the bonded diamond grains exhibiting an average grain size of about 20 μm or less, the preformed polycrystalline diamond table further including:
a first region extending inwardly from at least a portion of the outermost upper surface and at least a portion of the at least one side surface, the first region spaced from the interfacial surface, the first region including substantially only a first infiltrant disposed interstitially between the bonded diamond grains thereof; and
at least a second region extending inwardly from the interfacial surface, the at least a second region including a metallic second infiltrant comprising cobalt disposed interstitially between the bonded diamond grains thereof, the first infiltrant having a different composition than the second infiltrant.
20. The polycrystalline diamond compact of claim 19 wherein the region is configured as an annular region.
21. The polycrystalline diamond compact of claim 15 wherein the first region is configured as an annular region of the preformed polycrystalline diamond table.
22. The polycrystalline diamond compact of claim 15 wherein the at least a second region includes a portion that is generally centrally located relative to the first region.
23. The polycrystalline diamond compact of claim 15 wherein the first region extends along only a selected portion of the upper surface of the preformed polycrystalline diamond table.
24. The polycrystalline diamond compact of claim 15 wherein the first region of the polycrystalline diamond table is substantially free of tungsten carbide.
25. The polycrystalline diamond compact of claim 15 wherein the polycrystalline diamond table includes tungsten carbide.
26. The polycrystalline diamond compact of claim 15 wherein the bonded diamond grains of the polycrystalline diamond table exhibit an average grain size of about 20 μm or less.
27. The polycrystalline diamond compact of claim 19 wherein the first region is configured as a peripheral region of the preformed polycrystalline diamond table.
28. The polycrystalline diamond compact of claim 19 wherein the at least a second region includes a portion that is generally centrally located relative to the first region.
29. The polycrystalline diamond compact of claim 19 wherein the first region extends along only a selected portion of the upper surface of the preformed polycrystalline diamond table.
30. The polycrystalline diamond compact of claim 19 wherein the first region of the polycrystalline diamond table is substantially free of tungsten carbide.
31. The polycrystalline diamond compact of claim 19 wherein the polycrystalline diamond table includes tungsten carbide.
32. The polycrystalline diamond compact of claim 19 wherein the at least a first infiltrant includes silicon.
33. The polycrystalline diamond compact of claim 19 wherein the metallic infiltrant includes cobalt, iron, nickel, or alloys thereof.