PHOTOELECTRIC CONVERSION ELEMENT

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Patent No.: US None
App. No.: 13/954,252

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Abstract

A photoelectric conversion element contains a transparent conductive film, a p-type amorphous silicon film, an i-type amorphous silicon film, an n-type single-crystal silicon substrate, an i-type amorphous silicon film, a p-type amorphous silicon film, a transparent conductive film, and a metallic film; and the film thickness of the transparent conductive film is greater than or equal to that of the transparent conductive film.

Claims (38)

1 . A photoelectric conversion element comprising:

a crystal semiconductor substrate including a first principal surface and a second principal surface opposite to the first principal surface;

a first semiconductor layer formed on the first principal surface of the crystal semiconductor substrate;

a first transparent conductive film formed on the first semiconductor layer;

a second semiconductor layer formed on the second principal surface of the crystal semiconductor substrate;

a second transparent conductive film formed on the second semiconductor layer, the second transparent conductive film having a film thickness which is equal to or greater than a film thickness of the first transparent conductive film; and

a metallic layer formed on the second transparent conductive film.

2 . The photoelectric conversion element according to claim 1 , wherein

the first semiconductor layer includes a first conductivity type amorphous semiconductor layer, and

the second semiconductor layer includes a second conductivity type amorphous semiconductor layer, the second conductivity type being opposite to the first conductivity type.

3 . The photoelectric conversion element according to claim 1 , wherein

a quantity of water contained in the first transparent conductive film is greater than a quantity of water contained in the second transparent conductive film.

4 . The photoelectric conversion element according to claims 2 , wherein

a quantity of water contained in the first transparent conductive film is greater than a quantity of water contained in the second transparent conductive film.

5 . The photoelectric conversion element according to claim 1 , wherein

the metallic layer has an area corresponding to substantially a whole region of an area of a region where the second conductive film is formed.

6 . The photoelectric conversion element according to claim 2 , wherein

the metallic layer has an area corresponding to substantially a whole region of an area of a region where the second conductive film is formed.

7 . The photoelectric conversion element according to claim 3 , wherein

the metallic layer has an area corresponding to substantially a whole region of an area of a region where the second conductive film is formed.

8 . The photoelectric conversion element according to claim 4 , wherein

the metallic layer has an area corresponding to substantially a whole region of an area of a region where the second conductive film is formed.

9 . The photoelectric conversion element according to claim 1 , wherein