Reflective mask blank for EUV lithography
View Patent ↗To provide an EUV mask blank with which the etching selectivity under etching conditions for absorber layer is sufficiently high, line edge roughness after pattern formation will not be large, and a pattern with high resolution can be obtained. A reflective mask blank for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light, an absorber layer for absorbing EUV light and a hard mask layer formed in this order on the substrate; wherein the absorber layer contains at least one of tantalum (Ta) and palladium (Pd) as the main component; the hard mask layer contains chromium (Cr), either one of nitrogen (N) and oxygen (O) and hydrogen (H); and in the hard mask layer, the total content of Cr and either one of N and O is from 85 to 99.9 at %, and the content of H is from 0.1 to 15 at %.
1. A reflective mask blank for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light, an absorber layer for absorbing EUV light and a hard mask layer formed in this order on the substrate;
wherein the absorber layer contains at least one of tantalum (Ta) and palladium (Pd) as the main component;
the hard mask layer contains chromium (Cr), nitrogen (N) and hydrogen (H); and
in the hard mask layer, the total content of Cr and N is from 85, to 99.9, at %, and the content of H is from 0.1, to 15, at %.
2. A reflective mask blank for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light, an absorber layer for absorbing EUV light, a low reflective layer for inspection light (wavelength: 190, to 260, nm) for a mask pattern, and a hard mask layer formed in this order on the substrate;
wherein the absorber layer contains at least one of tantalum (Ta) and palladium (Pd) as the main component;
the low reflective layer contains at least one of tantalum (Ta) and palladium (Pd), and oxygen (O), as the main components;
the hard mask layer contains chromium (Cr), nitrogen (N) and hydrogen (H); and
in the hard mask layer, the total content of Cr and N is from 85, to 99.9, at %, and the content of H is from 0.1, to 15, at %.
3. The reflective mask blank for EUV lithography according to claim 1 , wherein in the hard mask layer, the compositional ratio (atomic ratio) of Cr to N is Cr:N=9:1, to 3:7.
4. The reflective mask blank for EUV lithography according to claim 2 , wherein in the hard mask layer, the compositional ratio (atomic ratio) of Cr to N is Cr:N=9:1, to 3:7.
5. The reflective mask blank for EUV lithography according to claim 1 , wherein the hard mask layer is formed by a sputtering method using a Cr target in an atmosphere containing an inert gas including at least one member selected from the group consisting of helium (He), argon (Ar), neon (Ne), krypton (Kr) and xenon (Xe), and nitrogen (N 2 ) and hydrogen (H 2 ).
6. The reflective mask blank for EUV lithography according to claim 2 , wherein the hard mask layer is formed by a sputtering method using a Cr target in an atmosphere containing an inert gas including at least one member selected from the group consisting of helium (He), argon (Ar), neon (Ne), krypton (Kr) and xenon (Xe), and nitrogen (N 2 ) and hydrogen (H 2 ).
7. A reflective mask blank for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light, an absorber layer for absorbing EUV light and a hard mask layer formed in this order on the substrate;
wherein the absorber layer contains at least one of tantalum (Ta) and palladium (Pd) as the main component;
the hard mask layer contains chromium (Cr), oxygen (O ) and hydrogen (H); and
in the hard mask layer, the total content of Cr and O is from 85, to 99.9, at %, and the content of H is from 0.1, to 15, at %.
8. A reflective mask blank for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light, an absorber layer for absorbing EUV light, a low reflective layer for inspection light (wavelength:190, to 260, nm) for a mask pattern, and a hard mask layer formed in this order on the substrate;
wherein the absorber layer contains at least one of tantalum (Ta) and palladium (Pd) as the main component;
the low reflective layer contains at least one of tantalum (Ta) and palladium (Pd), and oxygen (O), as the main components;
the hard mask layer contains chromium (Cr), oxygen (O) and hydrogen (H); and
in the hard mask layer, the total content of Cr and O is from 85, to 99.9, at %, and the content of H is from 0.1, to 15, at %.
9. The reflective mask blank for EUV lithography according to claim 7 , wherein in the hard mask layer, the compositional ratio (atomic ratio) of Cr to O is Cr:O=9:1, to 3:7.
10. The reflective mask blank for EUV lithography according to claim 8 , wherein in the hard mask layer, the compositional ratio (atomic ratio) of Cr to O is Cr:O=9:1, to 3:7.
11. The reflective mask blank for EUV lithography according to claim 7 , wherein the hard mask layer is formed by a sputtering method using a Cr target in an atmosphere containing an inert gas including at least one member selected from the group consisting of helium (He), argon (Ar), neon (Ne), krypton (Kr) and xenon (Xe), and oxygen (O 2 ) and hydrogen (H 2 ).
12. The reflective mask blank for EUV lithography according to claim 8 , wherein the hard mask layer is formed by a sputtering method using a Cr target in an atmosphere containing an inert gas including at least one member selected from the group consisting of helium (He), argon (Ar), neon (Ne), krypton (Kr) and xenon (Xe), and oxygen (O 2 ) and hydrogen (H 2 ).
13. The reflective mask blank for EUV lithography according to claim 1 , wherein the hard mask layer is in an amorphous state.
14. The reflective mask blank for EUV lithography according to claim 7 , wherein the hard mask layer is in an amorphous state.
15. The reflective mask blank for EUV lithography according to claim 1 , wherein the surface roughness (rms) of the surface of the hard mask layer is at most 0.5, nm.
16. The reflective mask blank for EUV lithography according to claim 7 , wherein the surface roughness (rms) of the surface of the hard mask layer is at most 0.5, nm.
17. The reflective mask blank for EUV lithography according to claim 1 , wherein the hard mask layer has a film thickness of from 2, to 30, nm.
18. The reflective mask blank for EUV lithography according to claim 7 , wherein the hard mask layer has a film thickness of from 2, to 30, nm.
19. The reflective mask blank for EUV lithography according to claim 1 , wherein between the reflective layer and the absorber layer, a protection layer to protect the reflective layer at the time of forming a pattern on the absorber layer is formed, and the protection layer is formed by at least one member selected from the group consisting of Ru, a Ru compound, SiO 2 , and a Cr compound.
20. The reflective mask blank for EUV lithography according to claim 7 , wherein between the reflective layer and the absorber layer, a protection layer to protect the reflective layer at the time of forming a pattern on the absorber layer is formed, and the protection layer is formed by at least one member selected from the group consisting of Ru, a Ru compound, SiO 2 , and a Cr compound.